Add to ORKGInternational audienceHexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), which can be synthesized, as graphite, its carbon analog, as bulk crystallites, nanotubes and layers. These structures meet a growing interest for deep UV LED and graphene engineering. In this talk, we will review the interplay between the structure, defects and luminescence properties of different BN structures and how these properties can be further exploited for their characterization
The III-nitride semiconductors are known for their excellent extrinsic properties like direct bandga...
Atomically thin boron nitride (BN) is an important 2D nanomaterial, with many properties distinct fr...
in press on Phys. Rev. BInternational audienceThe signature of defects in the optical spectra of hex...
International audienceHexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), whic...
International audienceHexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), whic...
International audienceh-BN is a wide band gap semiconductor (6.4 eV), which can be synthesized, as g...
International audienceHexagonal boron nitride (hBN) is a wide band gap semiconductor (6.4 eV), which...
We examine the effects of stacking sequence and number of layers on the electronic and luminescence ...
Hexagonal boron nitride (h-BN) is a layered material analogous to graphite that exhibits a hexagonal...
Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar ...
Defence is held on 11.6.2021 15:00 – 19:00 Zoom, https://aalto.zoom.us/j/66334552243Hexagonal bor...
Recent years have witnessed many breakthroughs in research on two-dimensional (2D) nanomaterials, am...
The design of novel nanomaterials with tunable geometries and properties has transformed chemistry a...
International audienceHexagonal boron nitride (hBN) has regained interest as a strategic component i...
The development of photonic based quantum technologies such as quantum encryption and quantum comput...
The III-nitride semiconductors are known for their excellent extrinsic properties like direct bandga...
Atomically thin boron nitride (BN) is an important 2D nanomaterial, with many properties distinct fr...
in press on Phys. Rev. BInternational audienceThe signature of defects in the optical spectra of hex...
International audienceHexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), whic...
International audienceHexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), whic...
International audienceh-BN is a wide band gap semiconductor (6.4 eV), which can be synthesized, as g...
International audienceHexagonal boron nitride (hBN) is a wide band gap semiconductor (6.4 eV), which...
We examine the effects of stacking sequence and number of layers on the electronic and luminescence ...
Hexagonal boron nitride (h-BN) is a layered material analogous to graphite that exhibits a hexagonal...
Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar ...
Defence is held on 11.6.2021 15:00 – 19:00 Zoom, https://aalto.zoom.us/j/66334552243Hexagonal bor...
Recent years have witnessed many breakthroughs in research on two-dimensional (2D) nanomaterials, am...
The design of novel nanomaterials with tunable geometries and properties has transformed chemistry a...
International audienceHexagonal boron nitride (hBN) has regained interest as a strategic component i...
The development of photonic based quantum technologies such as quantum encryption and quantum comput...
The III-nitride semiconductors are known for their excellent extrinsic properties like direct bandga...
Atomically thin boron nitride (BN) is an important 2D nanomaterial, with many properties distinct fr...
in press on Phys. Rev. BInternational audienceThe signature of defects in the optical spectra of hex...