Krūvininkų dinamika III grupės nitridiniuose junginiuose: nuo AlGaN iki InN

In the field of traditional III-nitrides, some of the nitride family members, such as GaN, Al poor AlGaN, and In poor InGaN, have become technologically mature, while others, including Al rich AlGaN, AlN, In-rich InGaN, and InN, have remained rather infant. This disparity is evident not only in the number of achievements chanting gains in material performance or efficiency, but also in the level of interest and the size of the available research pool. Moreover, the disparity in material maturity reveals itself in the subjects of prevalent studies: in case of mature nitrides, the research on basic material properties is reasonably complete, thus emergence of novel unconventional applications is observed; in case of immature nitrides, routine material characterization still prevails and is yet to be finished. Since this thesis targets materials different both in composition and maturity level, a two-fold approach is taken: for immature nitrides, the missing data on basic properties of carrier recombination and diffusion are filled in, while for mature nitrides, advanced unexplored phenomena and their impact on material performance are characterized. Following this outline, the work describes previously unreported evolution of radiative and nonradiative channels in AlGaN, offers a rare take on the phenomenon of recombination-enhanced defect reactions in AlGaN, discovers unexpected harmful processes in AlGaN/GaN interface, addresses actively debated recombination mechanisms in InN, and reveals a major InN feature – the extreme radiation resistance