This work deals with optimization of boards with commercial discrete power GaN FETs in applications where natural air convection is a strict constraint. In these cases, both thermal and electromagnetic behaviours are critical reliability issues for the board design, and they are modeled by Finite Element (FE) analysis, starting from literature description of the device structure, and measurements on a simple test circuit. For improved accuracy and more realistic modeling, verification and validation simulation steps are introduced, in order to evaluate the relevant error parameters for different FEM solutions. The results obtained demonstrate a good fitting with experimental and make it possible to improve board thermal characteristic. The ...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates,...
© 2016 IEEE. A new thermal modeling concept for accurate and fast thermal analysis of GaN based powe...
Semiconductor power devices play a key role in power electronics for the conversion, process and con...
International audiencePrinted Circuit Boards (PCBs) are often used to mount gallium nitride transist...
This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circu...
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation f...
New technological and packaging solutions are more and more being employed for power semiconductor s...
The paper presents a discussion on the thermal design of integrated power GaN devices. After a short...
We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance ...
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation ...
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT dev...
International audienceGaN transistors require extremely short connexions (parasitic inductance of a ...
The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semicondu...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates,...
© 2016 IEEE. A new thermal modeling concept for accurate and fast thermal analysis of GaN based powe...
Semiconductor power devices play a key role in power electronics for the conversion, process and con...
International audiencePrinted Circuit Boards (PCBs) are often used to mount gallium nitride transist...
This paper investigates different thermal management solutions for GaN HEMT mounted on Printed Circu...
While still expanding in the microwave arena, GaN-based HEMTs are increasingly making their way into...
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation f...
New technological and packaging solutions are more and more being employed for power semiconductor s...
The paper presents a discussion on the thermal design of integrated power GaN devices. After a short...
We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance ...
This paper shows a practical approach to GaN-based HEMT self-consistent electro-thermal simulation ...
This work describes a comprehensive approach to thermal and electro-thermal modeling of GaN HEMT dev...
International audienceGaN transistors require extremely short connexions (parasitic inductance of a ...
The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semicondu...
Throughout the history of power electronics, main driving force of developments is attribute to inno...
This paper presents a comprehensive evaluation of GaN HEMT technology development on SiC substrates,...
© 2016 IEEE. A new thermal modeling concept for accurate and fast thermal analysis of GaN based powe...