On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that spin drift and spin diffusion contribute additively to the spin current, where the spin diffusion current decreases with electric field while the spin drift current increases, demonstrating that the extension of the spin diffusion length by a strong field does not result in a significant increase in spin current in semiconductors owing to the competing effect of the electric field on diffusion. We also find that there is a spin drift-diffusion crossover field for a process in which the drift and diffusion contribute equally to the spin current, which suggests a possible method of identifying whether the process for a given electric field is ...
The spin transport and dynamics of optically injected spin polarized carri- ers are studied with a h...
We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polari...
International audienceThe aim of this paper is to derive and analyse diffusion models for semiconduc...
On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that...
We study theoretically the propagation and distribution of electron spin density in semiconductors ...
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nonde-generate, ...
The spin diffusion length is a key parameter to describe the transport properties of spin polarized ...
We study the evolution and distribution of nonequilibrium electron spin polarization in n-type semic...
We study the evolution and distribution of nonequilibrium electron spin polarization in n-type semic...
We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structur...
International audienceThe spin diffusion length is a key parameter to describe the transport propert...
International audienceThe spin diffusion length is a key parameter to describe the transport propert...
International audienceThe spin diffusion length is a key parameter to describe the transport propert...
The idea of utilizing the electron spin in semiconductor devices leads to the growth of the field se...
The spin transport and dynamics of optically injected spin polarized carri- ers are studied with a h...
The spin transport and dynamics of optically injected spin polarized carri- ers are studied with a h...
We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polari...
International audienceThe aim of this paper is to derive and analyse diffusion models for semiconduc...
On the basis of a spin drift-diffusion model, we show how the spin current is composed and find that...
We study theoretically the propagation and distribution of electron spin density in semiconductors ...
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nonde-generate, ...
The spin diffusion length is a key parameter to describe the transport properties of spin polarized ...
We study the evolution and distribution of nonequilibrium electron spin polarization in n-type semic...
We study the evolution and distribution of nonequilibrium electron spin polarization in n-type semic...
We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structur...
International audienceThe spin diffusion length is a key parameter to describe the transport propert...
International audienceThe spin diffusion length is a key parameter to describe the transport propert...
International audienceThe spin diffusion length is a key parameter to describe the transport propert...
The idea of utilizing the electron spin in semiconductor devices leads to the growth of the field se...
The spin transport and dynamics of optically injected spin polarized carri- ers are studied with a h...
The spin transport and dynamics of optically injected spin polarized carri- ers are studied with a h...
We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polari...
International audienceThe aim of this paper is to derive and analyse diffusion models for semiconduc...