The growth of supported Pt nanoparticles at room temperature employing a three-step atomic layer deposition (ALD) process, involving exposures to MeCpPtMe3, O2 plasma, and H2 plasma, has been investigated. From spectroscopic ellipsometry and transmission electron microscopy measurements it has been established that up to 300 cycles of ALD nanoparticles are formed by island formation and island growth. In situ infrared spectroscopy has been used to obtain more insight into the surface chemistry by determining which species are present at the surface during the different stages of nucleation as well as within one ALD cycle. After precursor exposure the surface is covered with a carbonaceous layer, originating from the precursor ligands or (de...
Particle coarsening is the main cause for thermal deactivation and lifetime reduction of supported P...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
Atomic layer deposition (ALD) of noble metals has attracted much attention in recent years for the d...
The growth of supported Pt nanoparticles at room temperature employing a three-step atomic layer dep...
Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe3 as the...
Pt nanoparticles were grown on titanium oxide and tungsten oxide at 200 °C by Pt atomic layer deposi...
A detailed understanding of the growth of noble metals by atomic layer deposition (ALD) is key for v...
The nucleation and growth of Pt atomic layer deposition (ALD) on Al2O3 substrates was studied using ...
Infrared spectroscopy was used to obtain absolute number information on the reaction products during...
The increasing interest in atomic layer deposition (ALD) of Pt for the controlled synthesis of suppo...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
Particle coarsening is the main cause for thermal deactivation and lifetime reduction of supported P...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
Atomic layer deposition (ALD) of noble metals has attracted much attention in recent years for the d...
The growth of supported Pt nanoparticles at room temperature employing a three-step atomic layer dep...
Thermal atomic layer deposition (ALD) and plasma-enhanced ALD (PE-ALD) of Pt, using MeCpPtMe3 as the...
Pt nanoparticles were grown on titanium oxide and tungsten oxide at 200 °C by Pt atomic layer deposi...
A detailed understanding of the growth of noble metals by atomic layer deposition (ALD) is key for v...
The nucleation and growth of Pt atomic layer deposition (ALD) on Al2O3 substrates was studied using ...
Infrared spectroscopy was used to obtain absolute number information on the reaction products during...
The increasing interest in atomic layer deposition (ALD) of Pt for the controlled synthesis of suppo...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
Particle coarsening is the main cause for thermal deactivation and lifetime reduction of supported P...
Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclope...
Atomic layer deposition (ALD) of noble metals has attracted much attention in recent years for the d...