Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2

Identifying the two-dimensional (2D) topological insulating (TI) state in new materials and its control are crucial aspects towards the development of voltage-controlled spintronic devices with low-power dissipation. Members of the 2D transition metal dichalcogenides have been recently predicted and experimentally reported as a new class of 2D TI materials, but in most cases edge conduction seems fragile and limited to the monolayer phase fabricated on specified substrates. Here, we realize the controlled patterning of the 1T′ phase embedded into the 2H phase of thin semiconducting molybdenum-disulfide by laser beam irradiation. Integer fractions of the quantum of resistance, the dependence on laser-irradiation conditions, magnetic field, and temperature, as well as the bulk gap observation by scanning tunneling spectroscopy and theoretical calculations indicate the presence of the quantum spin Hall phase in our patterned 1T′ phasesThe work carried out at Aoyama Gakuin University was partly supported by a grant for private universities and a Grant-in-Aid for Scientific Research (JP15K13277) awarded by MEXT. The work at the University of Tokyo was partly supported by Grantin-Aid for Scientific Research (JP17K05492, JP18H04218 and JP19H00652). J. J. P. and S. P. acknowledge Spanish MINECO through Grant No. FIS2016-80434-P, the Fundación Ramón Areces, the María de Maeztu Program for Units of Excellence in R&D (MDM-2014- 0377), the Comunidad Autónoma de Madrid through NANOMAGCOST Program, and the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship. S. P. acknowledges the computer resources and assistance provided by the Centro de Computación Científica of the Universidad Autónoma de Madrid. S. P. was also supported by the VILLUM FONDEN via the Center of Excellence for Dirac Materials (Grant No. 11744). D. M. and E. G.-M. gratefully acknowledge support from the Graphene Flagship Graphene Core2 Contract No. 785219. E. G.-M also acknowledges IJCI-2017-32297 from Spanish MINECO/AE