The dissertation aims to improve the efficiency of three-phase converters using SiC power devices.The methodology to design a high efficiency all-SiC three-phase converter is presented. Four aspects are included: SiC power device evaluation, power loop parasitics analysis, high efficiency current source rectifier, and paralleled current source rectifier system. The SiC JFET and MOSFET are tested based on voltage source and current source structures respectively. The dissertation proposes a device switching test circuit based on current source topology to simulate current commutation processes. The circuit can evaluate the switching performance and calculate switching loss of a power device used in a three-phase current source converter. The...
Due to the increasing demand of shipboard micro-grids in high efficiency and high-power density, the...
In this thesis, the performance of the full Silicon Carbide (SiC) half-bridge power module BSM120D12...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices a...
This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices a...
This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices a...
This thesis hovers over the basic introduction to Silicon Carbide (Metal Oxide Semiconductors Field-...
In this dissertation, the benefits of the three-phase current source rectifier (CSR) in high power r...
The emerging wide band-gap, silicon carbide (SiC) power devices greatly improve the switching perfor...
Silicon carbide (SiC)-based switching devices provide significant performance improvements in many a...
In this thesis work, a three phase PWM Rectifier for industry applications will be designed by using...
Silicon carbide (SiC)-based switching devices provide significant performance improvements in many a...
Abstract — A high-voltage silicon-carbide (SiC) power MOSFET was evaluated on two high-power factor ...
This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor ...
This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inv...
Due to the increasing demand of shipboard micro-grids in high efficiency and high-power density, the...
In this thesis, the performance of the full Silicon Carbide (SiC) half-bridge power module BSM120D12...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices a...
This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices a...
This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices a...
This thesis hovers over the basic introduction to Silicon Carbide (Metal Oxide Semiconductors Field-...
In this dissertation, the benefits of the three-phase current source rectifier (CSR) in high power r...
The emerging wide band-gap, silicon carbide (SiC) power devices greatly improve the switching perfor...
Silicon carbide (SiC)-based switching devices provide significant performance improvements in many a...
In this thesis work, a three phase PWM Rectifier for industry applications will be designed by using...
Silicon carbide (SiC)-based switching devices provide significant performance improvements in many a...
Abstract — A high-voltage silicon-carbide (SiC) power MOSFET was evaluated on two high-power factor ...
This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor ...
This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inv...
Due to the increasing demand of shipboard micro-grids in high efficiency and high-power density, the...
In this thesis, the performance of the full Silicon Carbide (SiC) half-bridge power module BSM120D12...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...