Specifies of the formed fast cover silica diodes

The authors have investigated the dependence of the current recovery time trr on the diode structures annealing parameters after irradiation by electrons е– with the energy of 4 and 10 MeV, and the fluence of 6•1015 and 8•1014 cm–2, respectively. Diodes with minimal time trr and maximum shape factor of the reduction current Krr are obtained by annealing of structures after irradiation by е– with the energy of 4 MeV and fluence 6•1015 cm–2. Time trr decreases with the increase of ratio of recombination centers concentration with energy level E3(0,37) to the concentration of other defects. At the same time, for silicon, doped with transmutation nuclear reactions, it is necessary to increase the annealing temperature as compared with the silicon, produced by the Czochralski method and zone melting method