Add to ORKGThe experiments have shown that microwave preliminary ionization of the plasma-forming gas increases the rate of the reactive ion etching of monocrystalline silicon (mono-Si) by four and more times in comparison with the etching process without it. It is established that the mode of plasma activation (the power of microwave discharge) and the value of plasma-forming gas pressure significantly affect the characteristics of mono-Si surface micro-roughness obtained in the result of etching.mixtures are mainly in the boiling point and the GWP
Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, ...
The impact of an argon/hydrogen microwave plasma treatment on silicon and silicon dioxide is investi...
At present, the research for finding new technical methods of treating materials with plasma, includ...
The experiments have shown that microwave preliminary ionization of the plasma-forming gas increases...
The roles of ions and neutral active species in microwave plasma etching are investigated. Silicon w...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas ...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas ...
Plasma figuring technologies have been widely used in the processing of silicon-based materials at a...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF /Ar and CF /O gas m...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF /Ar and CF /O gas m...
"The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas...
At present, the research for finding new technical methods of treating materials with plasma, includ...
At present, the research for finding new technical methods of treating materials with plasma, includ...
Reactive ion etching (RIE), microwave enhanced RIE (MW-RIE), and microwave downstream etching (MWDSE...
Microwave plasma is used to study the effects of metal catalysts and substrate temperature on the et...
Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, ...
The impact of an argon/hydrogen microwave plasma treatment on silicon and silicon dioxide is investi...
At present, the research for finding new technical methods of treating materials with plasma, includ...
The experiments have shown that microwave preliminary ionization of the plasma-forming gas increases...
The roles of ions and neutral active species in microwave plasma etching are investigated. Silicon w...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas ...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas ...
Plasma figuring technologies have been widely used in the processing of silicon-based materials at a...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF /Ar and CF /O gas m...
The reactive ion etching of quartz and Pyrex substrates was carried out using CF /Ar and CF /O gas m...
"The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas...
At present, the research for finding new technical methods of treating materials with plasma, includ...
At present, the research for finding new technical methods of treating materials with plasma, includ...
Reactive ion etching (RIE), microwave enhanced RIE (MW-RIE), and microwave downstream etching (MWDSE...
Microwave plasma is used to study the effects of metal catalysts and substrate temperature on the et...
Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, ...
The impact of an argon/hydrogen microwave plasma treatment on silicon and silicon dioxide is investi...
At present, the research for finding new technical methods of treating materials with plasma, includ...