The DEPFET is new type of active pixel particle detector. A MOSFET is integrated in each pixel, providing the first amplification stage of the readout electronics. Excellent noise parameters are obtained with this layout. The DEPFET detector will be integrated as an inner detector in the BELLE II and ILC experiment. A flexible measuring system with a wide control cycle range and minimal noise was designed for testing small detector prototypes.Noise of 60 electrons of the equivalent input charge was achieved during the first measurements on the system
Japan, focuses on the precision measurement of the CP-violation mechanism and on the search for phys...
A DEpleted P-channel Field Effect Transistor (DEPFET) based pixel detector was developed for the Bel...
The DEPFET detector-amplifier structure invented 1985 by J. Kemmer and G. Lutz possesses several uni...
The DEPFET is new type of active pixel particle detector. A MOSFET is integrated in each pixel, prov...
AbstractThe DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstandin...
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage...
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low...
Abstract The performance requirements of vertex detectors for future linear collider experiments is ...
The e/sup +/e/sup -/ linear collider physics program sets highly demanding requirements on the accur...
We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system ...
High energy physics experiments require detectors with an excellent imaging performance. The innermo...
DEPFET pixels offer a unique possibility for a high resolution pixel vertex detector at a future lin...
In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted...
For the future TeV-scale linear collider ILC (International Linear Collider) a vertex detector of un...
In the DEPFET pixel concept, the absorbed radiation directly modulates the channel current of a p-JF...
Japan, focuses on the precision measurement of the CP-violation mechanism and on the search for phys...
A DEpleted P-channel Field Effect Transistor (DEPFET) based pixel detector was developed for the Bel...
The DEPFET detector-amplifier structure invented 1985 by J. Kemmer and G. Lutz possesses several uni...
The DEPFET is new type of active pixel particle detector. A MOSFET is integrated in each pixel, prov...
AbstractThe DEPFET Collaboration develops highly granular, ultra-thin pixel detectors for outstandin...
DEPleted Field Effect Transistor (DEPFET) active pixel detectors combine a first amplification stage...
DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low...
Abstract The performance requirements of vertex detectors for future linear collider experiments is ...
The e/sup +/e/sup -/ linear collider physics program sets highly demanding requirements on the accur...
We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system ...
High energy physics experiments require detectors with an excellent imaging performance. The innermo...
DEPFET pixels offer a unique possibility for a high resolution pixel vertex detector at a future lin...
In a DEPleted Field Effect Transistor (DEPFET) sensor a MOSFET is integrated on a sidewards depleted...
For the future TeV-scale linear collider ILC (International Linear Collider) a vertex detector of un...
In the DEPFET pixel concept, the absorbed radiation directly modulates the channel current of a p-JF...
Japan, focuses on the precision measurement of the CP-violation mechanism and on the search for phys...
A DEpleted P-channel Field Effect Transistor (DEPFET) based pixel detector was developed for the Bel...
The DEPFET detector-amplifier structure invented 1985 by J. Kemmer and G. Lutz possesses several uni...