Investigation of silicon defects parameters in electron irradiated diodes

The electron irradiation defect’s parameters, produced in n-type float zone silicon by 10 MeV electron irradiation, have been investigated on p-n junction of diode. It was manufactured suitable for measurement p-n junction and irradiating it by the different dose of electrons, from 100 kRad to 2,2 MRad defects energy spectrum was obtained. Silicon defects parameters and their dependences were determined by deep level transient spectroscopy (DLTS). It were experimentally found specific for silicon electron levels peaks and their activation energies. Obtained traps’ peaks were attached to typical radiation defects: A-center, di-vacancy and E-center. Also it has been got and analyzed capacitance versus dose dependences and has been rated their meaning. Arrhenius plot was set, that allows obtaining main trap parameters: activation energy, carriers capture cross selection and trap density. Defects formation rate coefficient β was calculated that follows the forecast of lifetime of carriers and variation of current leakage of diodes. Additional „170“ defect centre for largest irradiation dose was observed and attached to di-vacancy duplex with another electric state – V20/-