Previous work on the reverse current-voltage characteristics of Ge point contact diodes has shown the presence of a voltage maximum ("turnover"). The present investigation is an attempt to explain the fact that the power dissipated at this voltage maximum decreases with increasing ambient temperature. Using diodes which were given rigorous tests to ensure stability of operation, accurate reverse characteristics were obtained at carefully controlled ambient temperatures. On the basis of a model involving surface leakage currents as well as the main bulk flow, a current characteristic involving two activation energies was proposed. It was shown that this model was capable of giving the observed behavior of the turnover power. Using parameter...
This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify,...
Anomalous electrical behaviour may appear in the d.c. and a.c. characteristics of metals or semicond...
The electrothermal behavior of single- and twofinger bipolar transistors at medium- and high-curren...
Previous work on the reverse current-voltage characteristics of Ge point contact diodes has shown th...
A study has been made of space-charge-limited hole flow in germanium by investigating the current-vo...
Germanium space-charge regions have been studied under conditions of double-depletion achieved by ap...
An investigation of the boundary states of power semiconductor devices is important with respect to ...
The d-c. and a-c. characteristics of p-n-p diodes were measured and interpreted on the basis of pres...
An empirical study on the effect of temperature on some electrical parameters of Schottky diode cont...
We present experimental investigations on the spatio-temporal nonlinear current flow in the post-bre...
The surface component of reverse current is a serious limitation for the operation of high voltage/c...
EMail sroundeleccanterburyacnz A power diode PSpice model is presented for cryo genic use This mod...
This work offers a reliability-oriented characterization of power p–i–n diodes turn-off transients. ...
The Enthalpy method has previously been used to model solid/liquid systems which contain moving inte...
Power rectifiers from electrical traction systems, but not only, can be irreversibly damaged if the ...
This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify,...
Anomalous electrical behaviour may appear in the d.c. and a.c. characteristics of metals or semicond...
The electrothermal behavior of single- and twofinger bipolar transistors at medium- and high-curren...
Previous work on the reverse current-voltage characteristics of Ge point contact diodes has shown th...
A study has been made of space-charge-limited hole flow in germanium by investigating the current-vo...
Germanium space-charge regions have been studied under conditions of double-depletion achieved by ap...
An investigation of the boundary states of power semiconductor devices is important with respect to ...
The d-c. and a-c. characteristics of p-n-p diodes were measured and interpreted on the basis of pres...
An empirical study on the effect of temperature on some electrical parameters of Schottky diode cont...
We present experimental investigations on the spatio-temporal nonlinear current flow in the post-bre...
The surface component of reverse current is a serious limitation for the operation of high voltage/c...
EMail sroundeleccanterburyacnz A power diode PSpice model is presented for cryo genic use This mod...
This work offers a reliability-oriented characterization of power p–i–n diodes turn-off transients. ...
The Enthalpy method has previously been used to model solid/liquid systems which contain moving inte...
Power rectifiers from electrical traction systems, but not only, can be irreversibly damaged if the ...
This paper calculates the failure rate on reversed polarized silicon diodes with the aim to justify,...
Anomalous electrical behaviour may appear in the d.c. and a.c. characteristics of metals or semicond...
The electrothermal behavior of single- and twofinger bipolar transistors at medium- and high-curren...