Photo-conductivity in lead selenide

The method of preparation of photoconductive layers of lead selenide is described. Details are given of the construction, of cells using lead selenide as a detector for use in the infra-red region of the spectrum up to 7 microns. One such cell is shown to have a minimum detectable power of 10⁻¹⁰ watts within its sensitive spectral range. Experiments, are described on the conductivity and wavelength sensitivity as a function of the temperature of the layer. The effects of oxygen and heat treatments on such a layer are shown. These observations are used to draw conclusions concerning the mechanism of the photoconductivity in layers of lead selenide.Science, Faculty ofPhysics and Astronomy, Department ofGraduat