The direct modulation of semiconductor lasers has many applications in data transmission. However, due to the frequency response it has been challenging to use directly modulated lasers for high speed digital transmission at bit-rates above 10 Gbps. With this in mind, designing a laser with a large modulation bandwidth to be used in high data-rate optical links is very important. Transistor lasers (TLs) are a potential candidate for this purpose. Based on these motivations, the main focus of this PhD research is on understanding the physics of the TL and predicting its performance. A detailed model that correctly incorporates the transistor effects on laser dynamics did not exist. The previous models do not differentiate between the bulk ca...
We present detailed yet largely analytical models for gain, optical bandwidth, and saturation power ...
The transistor laser is a unique three-port device that operates simultaneously as a transistor and...
The Fermi energy dependent stimulated lifetime and carrier densities based on the no-k selection rul...
The direct modulation of semiconductor lasers has many applications in data transmission. However, d...
The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advant...
The transistor laser (TL) is a recent novel invention by Professor Milton Feng and Nick Holonyak Jr....
The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetim...
The spontaneous emission recombination lifetime of carriers in the active region of transistor laser...
The ever-increasing demand for broadband capacity of the global optical communication networks puts ...
As data-center-based services such as cloud computing, HD and 4K video streaming, and social media b...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
The transistor laser (TL) is a unique three-terminal semiconductor laser device that possesses quali...
The possibility of carrier charge imbalance in the active region of quantum well lasers is demonstra...
Vertical-cavity surface-emitting laser (VCSEL) is a preferred light source for high-speed data gener...
Based on the observation of the degradation of the base transfer factor caused by the insertion of t...
We present detailed yet largely analytical models for gain, optical bandwidth, and saturation power ...
The transistor laser is a unique three-port device that operates simultaneously as a transistor and...
The Fermi energy dependent stimulated lifetime and carrier densities based on the no-k selection rul...
The direct modulation of semiconductor lasers has many applications in data transmission. However, d...
The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advant...
The transistor laser (TL) is a recent novel invention by Professor Milton Feng and Nick Holonyak Jr....
The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetim...
The spontaneous emission recombination lifetime of carriers in the active region of transistor laser...
The ever-increasing demand for broadband capacity of the global optical communication networks puts ...
As data-center-based services such as cloud computing, HD and 4K video streaming, and social media b...
In this work, a comprehensive dynamic model has been developed for simulating a novel semiconductor ...
The transistor laser (TL) is a unique three-terminal semiconductor laser device that possesses quali...
The possibility of carrier charge imbalance in the active region of quantum well lasers is demonstra...
Vertical-cavity surface-emitting laser (VCSEL) is a preferred light source for high-speed data gener...
Based on the observation of the degradation of the base transfer factor caused by the insertion of t...
We present detailed yet largely analytical models for gain, optical bandwidth, and saturation power ...
The transistor laser is a unique three-port device that operates simultaneously as a transistor and...
The Fermi energy dependent stimulated lifetime and carrier densities based on the no-k selection rul...