Large-signal spice models for heterojunction bipolar transistors and lasers

Large-signal SPICE models for heterojunction bipolar transistors (HBTs) and semiconductor lasers are developed. For a general graded-base double heterojunction bipolar transistor (DHBT), a Full Ebers-Moll model and its simplified versions for specific HBTs have been derived from DAPHNE, a and implemented in the circuit simulator HSPICE by using its piece-wise-linear features to represent the coefficients with voltage-dependent normalized junction velocity terms, which are used to describe tunneling factors and junction barrier heights for back-injected electrons. For uniform and moderately-graded base single heterojunction bipolar transistors (SHBTs), this model can be further simplified and BJT-compatible versions of the HBT SPICE model can also be derived by using an exponential fit to the normalized junction velocity. The experimental data, forward collector current and the variation of the oscillation frequency fosc with bias voltage Vcci f°r a graded-base SHBT and two five-stage ring oscillators, respectively, can be well-fitted by simulation results from DAPHNE and the BJT SPICE model. A popular large-signal equivalent circuit model, developed by Tucker [4, 5], based on the rate equation for a single-mode semiconductor laser, has been modified, simulated and compared with experimental data. Finally, the performance of HBT-laser transmitters is also simulated to show that the models developed in this thesis have the capability of being very useful design tools for HBT-laser optoelectronic integrated circuits. [Footnote] 1 DAPHNE: An acronym for Device Analysis Program for heterojunction Numerical Evaluation, has been developed at UBC based on the work of Ho [1], Ang [2], and Laser [3].Applied Science, Faculty ofElectrical and Computer Engineering, Department ofGraduat