High-performance photodetectors operating in the near-infrared (0.75–1.4 μm) and short-wave infrared (1.4–3.0 μm) portion of the electromagnetic spectrum are key components in many optical systems. Here, we report on a combined experimental and theoretical study of square millimeter array infrared photodetectors comprising 3 million n+–i–n+ InP nanowires grown by MOVPE from periodically ordered Au seed particles. The nominal i-segment, comprising 20 InAs0.40P0.60 quantum discs, was grown by use of an optimized Zn doping to compensate the nonintentional n-doping. The photodetectors exhibit bias- and power-dependent responsivities reaching record-high values of 250 A/W at 980 nm/20 nW and 990 A/W at 532 nm/60 nW, both at 3.5 V bias. Moreover,...
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼...
One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potent...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Nanowires offer remarkable opportunities for realizing new optoelectronic devices because of their u...
Here we report on the experimental results and advanced self-consistent real device simulations reve...
Optical sensors operating in the infrared range of the electromagnetic spectrum are key components i...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
Semiconductor nanowires have great potential for realizing broadband photodetectors monolithically i...
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p...
The availability of new manufacturing methodology in solid state physics makes it possible to grow n...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼...
One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potent...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Nanowires offer remarkable opportunities for realizing new optoelectronic devices because of their u...
Here we report on the experimental results and advanced self-consistent real device simulations reve...
Optical sensors operating in the infrared range of the electromagnetic spectrum are key components i...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
Semiconductor nanowires have great potential for realizing broadband photodetectors monolithically i...
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p...
The availability of new manufacturing methodology in solid state physics makes it possible to grow n...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection wavelength up to ∼...
One-dimensional InAs nanowire (NW)-based photodetectors have been widely studied due to their potent...
In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared (SWIR) comp...