Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1-xN epitaxial layers on sapphire (0001)

We report the successful growth of AlxGa1-xN (0 = 600 degrees C. The Al incorporation is confirmed with high resolution x-ray diffraction, x-ray photo electron microscopy and photoluminescence studies. It is observed that the growth temperature plays a critical role in determining the Al composition, which increases with increasing growth temperature. AlxGa1-xN layer with about 23% of Al composition is obtained on sapphire (0001) substrate at a growth temperature of 700 degrees C, which is about 100-150 degrees C lower than the conventional molecular beam epitaxy growth