Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Hikmat S. Hilal
Subhi K. Salih
Iyad A. Sa'adeddin
Guy Campet

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Publication date

January 2004

DOI

10.1080/0882751031000116115

Publisher

Informa UK Limited

Journal

Active and Passive Electronic Components

Abstract

The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs

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Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Abstract

Extracted data

Effect of Annealing and of Effect of Annealing and of Cooling Rates on n-GaAs Electrode Photoelectrochemical Characteristics

Abstract

Extracted data

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