Electrical and magnetic properties of n-Cd sub 1 sub - sub x Mn sub x Te close to the metal-insulator transition

temperatures and in zero field an activated form of the conductivity is observed. In applied magnetic fields (B > 50 mT) Efros-ShkIovskii variable range hopping is observed in the insulating phase. These results are attributed to the formation of a hard gap in the density of states, having a magnetic origin. At higher fields an insulator-metal phase transition occurs. In the metallic phase the conductivity can be described by a quantum correction to the zero temperature conductivity due to the effect of electron-electron interactions. Results obtained before and after illumination are consistent with scaling theory of electron localisation, having a critical exponent close to unity, indicative of the importance of electron-electron interactions. A reduction in the value of the critical field is seen after increasing the carrier density (B sub c = 2.0 and 1.3 T for n = 3.3 and 3.8 x 10 sup 1 sup 7 cm sup - sup 3 respectively). At low temperatures an anisotropy in the resistivity has been measured for samples in the spin glass phase. Magnetoresistance measurements have shown results consistent with previous measurements, in addition to a large, low field component that is attributed to the effect of magnetic field on electrons in the variable range hopping regime. Electrical transport and magnetic measurements have been made on n-Cd sub 1 sub - sub x Mn sub x Te (0.047 n sub c. At lo