The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films was measured and investigated in barium strontium titanate (Ba sub 0 sub . sub 5 Sr sub 0 sub . sub 5 TiO sub 3). The possible mechanisms responsible for this effect are reviewed. Functional measurements were performed on BST thin films, of 7.5 to 950 nm, by incorporating them into capacitor structures with bottom electrodes of strontium ruthenate (SRO) and thermally- evaporated Au top electrodes. A discussion on thin film growth considerations, optimal PLD conditions and the measurement techniques employed in the project is presented. The experimentally determined dielectric constant - thickness profile was fitted using the series capacitor...
We studied theoretically the influence of the progressive strain relaxation and the depolarizing-fie...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...
Thin-film capacitors, with barium strontium titanate (BST) dielectric layers between 7.5 and 950 nm ...
The aim of this thesis was to produce thin film ferroelectric capacitors with deliberate chemical he...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Due to the dependence on both bulk and interface properties neither the effective dielectric constan...
IUMRS-ICEM 2002, Xi an, 10-14 June 2002Apart from conventional parallel plate capacitors, the coplan...
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structur...
Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the las...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...
Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the las...
Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the las...
318-320Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silico...
Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited...
We studied theoretically the influence of the progressive strain relaxation and the depolarizing-fie...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...
Thin-film capacitors, with barium strontium titanate (BST) dielectric layers between 7.5 and 950 nm ...
The aim of this thesis was to produce thin film ferroelectric capacitors with deliberate chemical he...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
Due to the dependence on both bulk and interface properties neither the effective dielectric constan...
IUMRS-ICEM 2002, Xi an, 10-14 June 2002Apart from conventional parallel plate capacitors, the coplan...
Apart from conventional parallel plate capacitors, the coplanar capacitor is another useful structur...
Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the las...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...
Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the las...
Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the las...
318-320Radio frequency magnetron sputtered Ba0.8Sr0.2TiO3 thin films have been deposited on silico...
Thin films of barium strontium titanate (BST) including BaTiO3 and SrTiO3 end members were deposited...
We studied theoretically the influence of the progressive strain relaxation and the depolarizing-fie...
The ever increasing memory densities of the so called Dynamic Random Access Memory (DRAM) lead to a ...
High dielectric constant or ferroelectric materials are needed for a range of devices, non-volatile ...