Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects
- Anelli, G
- Campbell, M
- Delmastro, M
- Faccio, F
- Floria, S
- Giraldo, A
- Heijne, Erik H M
- Jarron, Pierre
- Kloukinas, Kostas C
- Marchioro, A
- Moreira, P
- Snoeys, W
Publication date
January 1999
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0018-9499 Citation count (estimate)
239Abstract
We discuss design issues related to the extensive use of Enclosed Layout Transistors (ELT's) and guard rings in deep submicron CMOS technologies in order to improve radiation tolerance of ASIC's designed for the LHC experiments (the Large Hadron Collider at present under construction at CERN). We present novel aspects related to the use of ELT's: noise measured before and after irradiation up to 100 Mrad (SiO/sub 2/), a model to calculate the W/L ratio and matching properties of these devices. Some conclusions concerning the density and the speed of IC's conceived with this design approach are finally drawn. (16 refs)
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