In this paper a charge sense amplifier (CSA) using a 5um In-Ga-Zn-O transistor technology on 15um thick flexible substrate is presented for readout of a 500dpi fingerprint sensor array targeting direct integration with active matrix organic light emitting displays (AMOLED). The CSA achieves a linear input range of 0.8V for rail to rail output at VDD=15V. The CSA comprises of a high gain and stable dual-ended output dual-stage amplifier. The n-type load is driven by a dual-stage buffer and start-up circuit to increase the performance and ensure stability. The amplifier operates down to 6V supply voltage. It achieves 31.17dB DC-gain, 140kHz gain-bandwidth, 53$°$ phase margin and dissipates 87uW at 15V. The footprint of the CSA is 0.3mm2and en...
Abstract—This paper proposes a sense amplifier with non-volatile memory in order to improve the imag...
A current-mode ambient-light sensing circuit, which is composed of p-intrinsic-metal (p-i-m) diodes ...
A dual-gate (DG) amorphous indium-gallium-zinc-oxide thin-film transistor (TFT)-driven pixel circuit...
An optical sensing circuit composed of low-temperature polycrystalline silicon (LTPS) p-type thin-fi...
In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (T...
In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (T...
There is considerable interest in adapting amorphous Indium-Gallium-Zinc-Oxide thin-film transistors...
There is considerable interest in adapting amorphous Indium-Gallium-Zinc-Oxide thin-film transistors...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
Silicon-based digital electronics have evolved over decades through an aggressive scaling process fo...
Abstract—This paper proposes a sense amplifier with non-volatile memory in order to improve the imag...
A current-mode ambient-light sensing circuit, which is composed of p-intrinsic-metal (p-i-m) diodes ...
A dual-gate (DG) amorphous indium-gallium-zinc-oxide thin-film transistor (TFT)-driven pixel circuit...
An optical sensing circuit composed of low-temperature polycrystalline silicon (LTPS) p-type thin-fi...
In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (T...
In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (T...
There is considerable interest in adapting amorphous Indium-Gallium-Zinc-Oxide thin-film transistors...
There is considerable interest in adapting amorphous Indium-Gallium-Zinc-Oxide thin-film transistors...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
With the advent of the Internet of things, wearable sensing devices are gaining importance in our da...
Silicon-based digital electronics have evolved over decades through an aggressive scaling process fo...
Abstract—This paper proposes a sense amplifier with non-volatile memory in order to improve the imag...
A current-mode ambient-light sensing circuit, which is composed of p-intrinsic-metal (p-i-m) diodes ...
A dual-gate (DG) amorphous indium-gallium-zinc-oxide thin-film transistor (TFT)-driven pixel circuit...