Ando’s model provides a rigorous quantum mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic nanowires and improve the model introducing surface roughness distribution functions on a finite domain with analytical expressions for the average surface roughness matrix elements. This approach is valid for any roughness size and extends beyond the commonly used Prange-Nee approximation. The resistivity scaling is obtained from the self-consistent relaxation time solution of the Boltzmann transport equation and is compared to Prange-Nee’s approach and other known methods. The results show that a substantial drop in resistivity c...
The influence of electron scattering by rough boundaries on electrical conductivity of quantum wires...
In this paper, using the Non-Equilibrium Green Function (NEGF) formalism, we have calculated the ele...
The effects due to electron scattering by rough boundaries on the electrical conductivity of quantum...
Ando’s model provides a rigorous quantum mechanical framework for electron-surface roughness scatter...
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collisi...
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grai...
A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann tr...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
We present a new model for surface roughness (SR) scattering in n-type multi-gate FETs (MuGFETs) and...
In this paper we investigate the effect of surface roughness scattering on transport in silicon nano...
156 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2010.We introduce novel statistica...
This paper presents the derivation, implementation and validation of a new model for Surface Roughne...
none5Lateral size effects on surface-roughness limited mobility in silicon nanowire FETs are analyze...
Using a full three-dimensional (3D), quantum transport simulator, we theoretically investigate the e...
The influence of electron scattering by rough boundaries on electrical conductivity of quantum wires...
In this paper, using the Non-Equilibrium Green Function (NEGF) formalism, we have calculated the ele...
The effects due to electron scattering by rough boundaries on the electrical conductivity of quantum...
Ando’s model provides a rigorous quantum mechanical framework for electron-surface roughness scatter...
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collisi...
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grai...
A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann tr...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
The resistivity of metallic thin films and nanowires increases drastically when the film thickness o...
We present a new model for surface roughness (SR) scattering in n-type multi-gate FETs (MuGFETs) and...
In this paper we investigate the effect of surface roughness scattering on transport in silicon nano...
156 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2010.We introduce novel statistica...
This paper presents the derivation, implementation and validation of a new model for Surface Roughne...
none5Lateral size effects on surface-roughness limited mobility in silicon nanowire FETs are analyze...
Using a full three-dimensional (3D), quantum transport simulator, we theoretically investigate the e...
The influence of electron scattering by rough boundaries on electrical conductivity of quantum wires...
In this paper, using the Non-Equilibrium Green Function (NEGF) formalism, we have calculated the ele...
The effects due to electron scattering by rough boundaries on the electrical conductivity of quantum...