Over the last decade the spectroscopies of internal photoemission (IPE)and photoconductivity (PC) have established a record of success when applied to the investigation of thin insulating layers and their interfaces. However, when considering challenges related with the application of these techniques to the characterization of solid hetero-structures for the use in electronic memory circuits, two major complications become evident: First, the photoinjected (or photogenerated) charge carriers may not betransported across the entire insulating layer of a charge-trapping memory cell but become trapped inside of it. In this case no reliable interpretation of the steady-state photocurrent is possible, which precludes one from carryingout conven...
An observable e.m.f. exists in a semiconductor when a non-equilibrium carrier concentration is prese...
This paper examines the use of Constant Photocurrent (CPM) measurements on thin film semiconductors,...
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The elect...
With the size of modern electronic devices reduced to a few nanometer scale, their electronic perfor...
Photoconductivity is the incremental change in the electrical conductivity of a semiconductor or ins...
The ability to detect and determine a typically weak internal photoemission (IPE) signal from a usua...
A method for extracting energy band alignment of metal/high-k oxide/semiconductor structures from in...
The photocurrent spectra for large-area molecular junctions are reported, where partially transparen...
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The elect...
In this study, photoemission spectroscopy (PES) was used to investigate the electronic properties of...
Experimental analysis of photocurrent spectra in Si/SiO2/transition metal dichalcogenide (TMD) struc...
We have developed internal-photoemission microscopy (IPEM) which is capable of revealing microscopic...
The photocurrent spectra for large-area molecular junctions are reported, where partially transparen...
A model has been developed to describe the emission of electrons from silicon across the oxide energ...
Understanding the energy alignment of electronic bands, which originate from ultrathin MoS2 layers a...
An observable e.m.f. exists in a semiconductor when a non-equilibrium carrier concentration is prese...
This paper examines the use of Constant Photocurrent (CPM) measurements on thin film semiconductors,...
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The elect...
With the size of modern electronic devices reduced to a few nanometer scale, their electronic perfor...
Photoconductivity is the incremental change in the electrical conductivity of a semiconductor or ins...
The ability to detect and determine a typically weak internal photoemission (IPE) signal from a usua...
A method for extracting energy band alignment of metal/high-k oxide/semiconductor structures from in...
The photocurrent spectra for large-area molecular junctions are reported, where partially transparen...
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The elect...
In this study, photoemission spectroscopy (PES) was used to investigate the electronic properties of...
Experimental analysis of photocurrent spectra in Si/SiO2/transition metal dichalcogenide (TMD) struc...
We have developed internal-photoemission microscopy (IPEM) which is capable of revealing microscopic...
The photocurrent spectra for large-area molecular junctions are reported, where partially transparen...
A model has been developed to describe the emission of electrons from silicon across the oxide energ...
Understanding the energy alignment of electronic bands, which originate from ultrathin MoS2 layers a...
An observable e.m.f. exists in a semiconductor when a non-equilibrium carrier concentration is prese...
This paper examines the use of Constant Photocurrent (CPM) measurements on thin film semiconductors,...
Extended electron states in insulating oxide layers on Si and high-mobility semiconductors The elect...