A novel low-temperature Cu-Cu bonding approach called the insertion bonding technique has been developed. This technique hinges on the introduction of a tangential pressure at the metal-metal interface, which leads to a high localized plastic deformation that is essential for bond formation. Through finite element modeling studies, it is observed that the insertion bonding technique results in a significantly larger plastic deformation in comparison to the conventional bonding technique under the same bonding conditions. First experimental studies of the insertion bonding technique were performed and it is observed that an electrically yielding Cu-Cu joint is achieved at a low bonding temperature of 100°C. This shows that the insertion bond...
Cu-to-Cu wire bonding provides benefits both from economical and from electrical point of view. Howe...
To replace Al–Ge eutectic bonding, low-temperature direct Cu-to-Cu bonding was developed in this stu...
Two copper (Cu) substrates were bonded using silver (Ag) and indium (In) and annealed at 200-250 °C ...
Direct metal bonding is a method of joining two metal surfaces under ambient conditions without an i...
One of the primary and critical requirements for high quality wafer level thermocompression Copper-C...
One of the key methods to form interconnects between electrical packages and devices is by thermocom...
Metal-based bonding will create vertical electrical connections between the dies and simultaneously...
In 3D IC integration, a critical demand of interfacial joints in high-end devices is ultra-fine pitc...
Wire bonding technology has been widely used in the semiconductor industry for interconnection betwe...
A surface creep model is presented for analyzing Cu-to-Cu direct bonding under thermal compression. ...
Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing int...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
International audienceHybrid bonding is a very promising 3D packaging technology which allows extrem...
Copper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu...
This study presents the results for Cu/In bonding based on the solid–liquid interdiffusion (SLID) pr...
Cu-to-Cu wire bonding provides benefits both from economical and from electrical point of view. Howe...
To replace Al–Ge eutectic bonding, low-temperature direct Cu-to-Cu bonding was developed in this stu...
Two copper (Cu) substrates were bonded using silver (Ag) and indium (In) and annealed at 200-250 °C ...
Direct metal bonding is a method of joining two metal surfaces under ambient conditions without an i...
One of the primary and critical requirements for high quality wafer level thermocompression Copper-C...
One of the key methods to form interconnects between electrical packages and devices is by thermocom...
Metal-based bonding will create vertical electrical connections between the dies and simultaneously...
In 3D IC integration, a critical demand of interfacial joints in high-end devices is ultra-fine pitc...
Wire bonding technology has been widely used in the semiconductor industry for interconnection betwe...
A surface creep model is presented for analyzing Cu-to-Cu direct bonding under thermal compression. ...
Advancement of the current Two-Dimensional integrated circuits (2D-ICs) is limited by increasing int...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, ...
International audienceHybrid bonding is a very promising 3D packaging technology which allows extrem...
Copper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu...
This study presents the results for Cu/In bonding based on the solid–liquid interdiffusion (SLID) pr...
Cu-to-Cu wire bonding provides benefits both from economical and from electrical point of view. Howe...
To replace Al–Ge eutectic bonding, low-temperature direct Cu-to-Cu bonding was developed in this stu...
Two copper (Cu) substrates were bonded using silver (Ag) and indium (In) and annealed at 200-250 °C ...