Controlled III/V nanowire growth by selective-area vapor-phase epitaxy

We report on the growth of surface-bound, vertically oriented one-dimensional III/V nanostructures, specifically GaAs and InAs nanowires, on lattice-matched and -mismatched substrates by selective-area vapor-phase epitaxy. Control of nanowire features and growth directions is achieved by tuning the growth conditions. Grown nanostructures are characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy.status: publishe