We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a combined approach of emission channeling experiments and ab initio total energy calculations. Following common expectation, a fraction of these transition metals (TMs) was found on the substitutional Ge position. Less expected is the observation of a second fraction on the sixfold coordinated bond-centered site. Ab initio calculated heats of formation suggest this is the result of the trapping of a vacancy by a substitutional TM impurity, spontaneously forming an impurity-vacancy complex in the split-vacancy configuration. We also present an approach to displace the TM impurities from the electrically active substitutional site to the bond-cente...
We report on an emission channeling study of the lattice site location of implanted Er in Ge togethe...
We present a lattice location study of the n-type dopant arsenic after ion implantation into germani...
Neste trabalho apresentamos estudos sobre a estrutura eletronica de impurezas isoladas e complexas e...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
Although the first transistor was based on germanium, current chip technology mainly uses silicon du...
In this work, we present a lattice location study of Sn in Ge. From emission channeling experiments,...
The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn im...
We report on emission channeling experiments to determine the lattice location and the thermal stabi...
In the present study density functional theory calculations have been used to calculate the binding ...
In the present study density functional theory calculations have been used to calculate the binding ...
Gold, silver and copper defects in germanium are modeled using density functional theory. The struct...
%IS366 %title\\ \\Transition metals (TMs) in semiconductors have been the subject of considerable re...
The past two decades, germanium has drawn international attention as one of the most promising mater...
The electronic properties of the 3d transition metal impurities titanium and chromium in crystalline...
We report on an emission channeling study of the lattice site location of implanted Er in Ge togethe...
We present a lattice location study of the n-type dopant arsenic after ion implantation into germani...
Neste trabalho apresentamos estudos sobre a estrutura eletronica de impurezas isoladas e complexas e...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
Although the first transistor was based on germanium, current chip technology mainly uses silicon du...
In this work, we present a lattice location study of Sn in Ge. From emission channeling experiments,...
The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn im...
We report on emission channeling experiments to determine the lattice location and the thermal stabi...
In the present study density functional theory calculations have been used to calculate the binding ...
In the present study density functional theory calculations have been used to calculate the binding ...
Gold, silver and copper defects in germanium are modeled using density functional theory. The struct...
%IS366 %title\\ \\Transition metals (TMs) in semiconductors have been the subject of considerable re...
The past two decades, germanium has drawn international attention as one of the most promising mater...
The electronic properties of the 3d transition metal impurities titanium and chromium in crystalline...
We report on an emission channeling study of the lattice site location of implanted Er in Ge togethe...
We present a lattice location study of the n-type dopant arsenic after ion implantation into germani...
Neste trabalho apresentamos estudos sobre a estrutura eletronica de impurezas isoladas e complexas e...