We report on an emission channeling study of the lattice site location of implanted Er in Ge together with its thermal stability. We found direct experimental evidence of Er atoms located on the tetrahedral (T) interstitial site and on the bond-centered (BC) site, with a maximum total occupancy after annealing at 400 degrees C. Whereas Er is expected to occupy the T site in a diamond crystal structure, the observation of BC Er in Ge is more surprising and believed to be related to the Er-vacancy defect in the split-vacancy complex configuration. (C) 2008 American Institute of Physics.status: publishe
A GaN thin film was implanted with 5 × 1014 cm−2 of 60 keV stable 166Er, followed by the implantatio...
The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the em...
Unconventionally high amount of atomic vacancies up to more than 10% are known to form in Ge-Sb-Te c...
We report on an emission channeling study of the lattice site location of implanted Er in Ge togethe...
We report on emission channeling experiments to determine the lattice location and the thermal stabi...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We have used electrical measurements Deep level transient spectroscopy (DLTS) complemented by high-r...
Electron and neutron irradiation of diamond produces a wide variety of different EPR defect centres....
The effects of thermal annealing and codoped impurities including carbon, nitrogen, oxygen, and fluo...
In this work, we present a lattice location study of Sn in Ge. From emission channeling experiments,...
Linear combination of atomic orbital—molecular orbital cluster calculations using extended Hückel t...
We have used conversion electron emission channeling to determine the lattice location of $^{167m}$E...
Twelve satellite centres, labelled as R1A-L, were detected and characterised by electron spin resona...
%IS366 %title\\ \\Transition metals (TMs) in semiconductors have been the subject of considerable re...
A GaN thin film was implanted with 5 × 1014 cm−2 of 60 keV stable 166Er, followed by the implantatio...
The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the em...
Unconventionally high amount of atomic vacancies up to more than 10% are known to form in Ge-Sb-Te c...
We report on an emission channeling study of the lattice site location of implanted Er in Ge togethe...
We report on emission channeling experiments to determine the lattice location and the thermal stabi...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium from a com...
We have used electrical measurements Deep level transient spectroscopy (DLTS) complemented by high-r...
Electron and neutron irradiation of diamond produces a wide variety of different EPR defect centres....
The effects of thermal annealing and codoped impurities including carbon, nitrogen, oxygen, and fluo...
In this work, we present a lattice location study of Sn in Ge. From emission channeling experiments,...
Linear combination of atomic orbital—molecular orbital cluster calculations using extended Hückel t...
We have used conversion electron emission channeling to determine the lattice location of $^{167m}$E...
Twelve satellite centres, labelled as R1A-L, were detected and characterised by electron spin resona...
%IS366 %title\\ \\Transition metals (TMs) in semiconductors have been the subject of considerable re...
A GaN thin film was implanted with 5 × 1014 cm−2 of 60 keV stable 166Er, followed by the implantatio...
The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the em...
Unconventionally high amount of atomic vacancies up to more than 10% are known to form in Ge-Sb-Te c...