A new impulse excitation technique (IET) device was used to investigate the elastic and anelastic properties of silicon nitride. The test method involves the excitation of vibration of a freely suspended test specimen by gently tapping the specimen with a small projectile. The main (resonance) frequencies of the free vibration of the specimen are related to the elastic moduli through standard equations. The damping or internal friction (Q(-1)) is calculated from the exponential decay of the vibration amplitude. Tests were performed at room temperature on a sintered silicon nitride, both before and after a heat treatment. The heat treatment (1700 K, 5 hours) is shown to result in the crystallisation of initially amorphous grain boundary phas...
We present a micro-electro-mechanical system-based experimental technique to measure thermal conduct...
Influences of the sintering liquid system, temperature, microstructure and post sintering heat treat...
The crack growth resistance under thermal shock loading on silicon nitride was characterized using D...
The impulse excitation technique (IET), based on resonant vibration analysis, was used to determine ...
Viscous energy dissipation in a liquid phase sintered silicon nitride, and the resulting internal fr...
Viscous energy dissipation in a liquid phase sintered silicon nitride was investigated at temperatur...
To investigate the link between internal friction and fatigue resistance of sintered silicon nitride...
International audienceSilicon nitride processed by gas pressure sintering contains a very small amou...
In this paper, a commercial liquid phase sintered silicon nitride with Y2O3 and Al2O3 additives is i...
Abstract: Si3N4/TiN and YMgSiAlONISiC composites have been studied by isothermal mechanical spectros...
Recent developments in digital signal analysis have allowed substantial progress in the field of imp...
Stress induced by the thermal gradients near the meltsolid interface affects the intrinsic point def...
Impact tests of ceramics at elevated temperature up to 1400°C are performed by the split Hopkinson p...
In this paper, silicon nitride ceramics with Y2O3 and/or Al2O3 sinter additives, with and without Ti...
Si3N4/TiN and YMgSiAlON/SiC composites have been studied by isothermal mechanical spectroscopy over ...
We present a micro-electro-mechanical system-based experimental technique to measure thermal conduct...
Influences of the sintering liquid system, temperature, microstructure and post sintering heat treat...
The crack growth resistance under thermal shock loading on silicon nitride was characterized using D...
The impulse excitation technique (IET), based on resonant vibration analysis, was used to determine ...
Viscous energy dissipation in a liquid phase sintered silicon nitride, and the resulting internal fr...
Viscous energy dissipation in a liquid phase sintered silicon nitride was investigated at temperatur...
To investigate the link between internal friction and fatigue resistance of sintered silicon nitride...
International audienceSilicon nitride processed by gas pressure sintering contains a very small amou...
In this paper, a commercial liquid phase sintered silicon nitride with Y2O3 and Al2O3 additives is i...
Abstract: Si3N4/TiN and YMgSiAlONISiC composites have been studied by isothermal mechanical spectros...
Recent developments in digital signal analysis have allowed substantial progress in the field of imp...
Stress induced by the thermal gradients near the meltsolid interface affects the intrinsic point def...
Impact tests of ceramics at elevated temperature up to 1400°C are performed by the split Hopkinson p...
In this paper, silicon nitride ceramics with Y2O3 and/or Al2O3 sinter additives, with and without Ti...
Si3N4/TiN and YMgSiAlON/SiC composites have been studied by isothermal mechanical spectroscopy over ...
We present a micro-electro-mechanical system-based experimental technique to measure thermal conduct...
Influences of the sintering liquid system, temperature, microstructure and post sintering heat treat...
The crack growth resistance under thermal shock loading on silicon nitride was characterized using D...