To face up the increase in their application fields, laser emitters, including VCSELs, are moving rapidly towards greater integration capabilities, as well as diversified functionalities. Sophisticated structures and geometries for these devices are then mandatory, which implies overcoming first some technological limits. This thesis focuses, on the one hand, on the implementation of a methodology for optimizing molecular beam epitaxial growth from a rapid diagnostic method (uniformity, optical properties control) that can be applied to novel VCSEL structures with stacks of non-periodic layer. On the other hand, the wet GaAlAs oxidation technology is studied. This process, known as AlOx, opens the way for obtaining high-performance single-m...
This work concerns molecular beam epitaxy (MBE) growth and characterization of multilayer structures...
International audienceThe oxidation of III-V semiconductors is a crucial technological process in th...
We have studied the wet thermal oxidation of In0.52Al0.48AsIn0.52Al0.48As and its potential applicat...
To face up the increase in their application fields, laser emitters, including VCSELs, are moving ra...
Face à la diversification des domaines d'application en optoélectronique, les émetteurs lasers, dont...
Due to the growing interest in VCSELs and the breadth of their application fields, VCSELs are evolvi...
Les VCSELs sont aujourd'hui des composants incontournables pour les applications datacom. Les travau...
Vertical cavity surface emitting lasers (VCSELs) are particularly well suited for Tunable Diode Lase...
Nowadays, VCSELs are key components for datacom applications. The work presented is focused on the s...
The authors discuss the selective conversion of buried layers of AlGaAs to a stable oxide and the im...
The purpose of this thesis was to design and implement a wet thermal oxidation oven optimized for th...
The authors discuss revolutionary performance advances in selectively oxidized vertical-cavity surfa...
National audienceThe wet oxidation of aluminum-containing III-V semiconductors is an established tec...
International audienceWe propose a simplified and easier fabrication process flow for the manufactur...
This work deals with the fabrication and the characterization of buried oxide-confined vertical-cavi...
This work concerns molecular beam epitaxy (MBE) growth and characterization of multilayer structures...
International audienceThe oxidation of III-V semiconductors is a crucial technological process in th...
We have studied the wet thermal oxidation of In0.52Al0.48AsIn0.52Al0.48As and its potential applicat...
To face up the increase in their application fields, laser emitters, including VCSELs, are moving ra...
Face à la diversification des domaines d'application en optoélectronique, les émetteurs lasers, dont...
Due to the growing interest in VCSELs and the breadth of their application fields, VCSELs are evolvi...
Les VCSELs sont aujourd'hui des composants incontournables pour les applications datacom. Les travau...
Vertical cavity surface emitting lasers (VCSELs) are particularly well suited for Tunable Diode Lase...
Nowadays, VCSELs are key components for datacom applications. The work presented is focused on the s...
The authors discuss the selective conversion of buried layers of AlGaAs to a stable oxide and the im...
The purpose of this thesis was to design and implement a wet thermal oxidation oven optimized for th...
The authors discuss revolutionary performance advances in selectively oxidized vertical-cavity surfa...
National audienceThe wet oxidation of aluminum-containing III-V semiconductors is an established tec...
International audienceWe propose a simplified and easier fabrication process flow for the manufactur...
This work deals with the fabrication and the characterization of buried oxide-confined vertical-cavi...
This work concerns molecular beam epitaxy (MBE) growth and characterization of multilayer structures...
International audienceThe oxidation of III-V semiconductors is a crucial technological process in th...
We have studied the wet thermal oxidation of In0.52Al0.48AsIn0.52Al0.48As and its potential applicat...