Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature

International audienceIn high current, high voltage, high temperature (T > 125 °C) power applications, commercially available conventional silicon thyristors are not suited because they present high leakage current. In this context, this paper presents a high-symmetrical (voltage) thyristor structure that presents a lower leakage current and higher breakover voltage as compared with the conventional thyristor at T > 125 °C. It is shown through 2-D physical simulations that the replacement of the P-emitter of a standard symmetrical thyristor by a judicious association of P diffusions and Schottky contacts at the anode side contributes to the reduction of the leakage current in the forward blocking state at high temperature. A fine tune of the anode side configuration will improve the forward OFF-state behavior with only a negligible ON-state voltage drop degradation. Moreover, the comparison with the conventional anode short thyristor shows that the insertion of Schottky contacts leads to the same improvements in terms of OFF-state forward break over voltage and leakage current and also presents a high reverse blocking voltage