Effect of antireflection coating on the crystallization of amorphous silicon films by flash lamp annealing

We succeed in decreasing the fluence of a flash lamp pulse required for the crystallization of electron-beam (EB)-evaporated amorphous silicon (a-Si) films using silicon nitride (SiN_x) antireflection films. The antireflection effect of SiN_x is confirmed not only when SiN_x is placed on the surface of a-Si or flash lamp annealing (FLA) is performed from the film side, but also when SiN_x is inserted between glass and a-Si and a flash pulse is supplied from the glass side. We also quantitatively confirm, by calculating flash lamp pulse energies actually reaching a-Si films using reflectance spectra, that the reduction in the fluence of a flash lamp pulse for the crystallization of a-Si films is due to the antireflection effect of SiN_x