A theoretical investigation of the binding energy, the radial probability distribution and optical properties (absorption coefficient (AC) and refractive index change (RIC)) of InGaN/GaN multilayer quantum dot (QD) is presented. The calculations are performed within the effective-mass approximation. A shooting method is presented to obtain numerical values for the eigenvalues and eigenfunctions of the structure. The energy eigenvalue, density of probability and optical absorption are compared for cases without and with impurity. It is also found that the ACs and RICs exhibit blue or redshift with different structure of potential profile. The results indicate that the optical properties can be sensitively adjusted by geometry of structure an...
WOS: 000278904200039We calculate the energy eigenvalues and the sate functions of one-electron Quant...
In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown...
WOS: 000276508200006The binding energy and wavefunctions of the is, 1 p, 1d and if energy states of ...
A theoretical investigation of the binding energy, the radial probability distribution and optical p...
We calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quan...
Based on the Schrödinger equation for envelope function in the effective mass approximation, linear ...
In this study we have performed a numerical approach to investigate the optical properties of GaN/Al...
In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtz...
A theoretical investigation of the optical properties of In_xGa_{1-x}N quantum dots in In_{y}Ga_{1-y...
Semiconductor quantum dots (QDs) are of great topical interest due to the possibility to study basic...
Dilute nitride III-V compounds are potential candidate materials for the next generation of telecomm...
In this work, oscillator strength and quantum efficiency of new spherical GaN/AlGaN quantum do...
InGaN quantum dots were grown on sapphire substrate by radio-frequency plasma-excited molecular beam...
The present work investigates the nonlinear optical properties of a GaN quantum dot in the disk limi...
In this paper, we investigated the transient electron population and the transient behaviour of the ...
WOS: 000278904200039We calculate the energy eigenvalues and the sate functions of one-electron Quant...
In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown...
WOS: 000276508200006The binding energy and wavefunctions of the is, 1 p, 1d and if energy states of ...
A theoretical investigation of the binding energy, the radial probability distribution and optical p...
We calculate the nonlinear optical absorption coefficient of a cylindrical zincblende GaN-based quan...
Based on the Schrödinger equation for envelope function in the effective mass approximation, linear ...
In this study we have performed a numerical approach to investigate the optical properties of GaN/Al...
In this paper, a model to estimate minibands and theinterminiband absorption coefficient for a wurtz...
A theoretical investigation of the optical properties of In_xGa_{1-x}N quantum dots in In_{y}Ga_{1-y...
Semiconductor quantum dots (QDs) are of great topical interest due to the possibility to study basic...
Dilute nitride III-V compounds are potential candidate materials for the next generation of telecomm...
In this work, oscillator strength and quantum efficiency of new spherical GaN/AlGaN quantum do...
InGaN quantum dots were grown on sapphire substrate by radio-frequency plasma-excited molecular beam...
The present work investigates the nonlinear optical properties of a GaN quantum dot in the disk limi...
In this paper, we investigated the transient electron population and the transient behaviour of the ...
WOS: 000278904200039We calculate the energy eigenvalues and the sate functions of one-electron Quant...
In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown...
WOS: 000276508200006The binding energy and wavefunctions of the is, 1 p, 1d and if energy states of ...