The total electrical resistivity measurements of the Ni-Si silicide films, with thicknesses of 37-400 nm have been carried out as a function of temperature and film thickness in a wide temperature range of 100-900 K. The temperature-dependence of the total resistivity of the films shows unusual behavior. The total resistivity of the Ni-Si silicide films in this work increases linearly with temperature up to a Tm temperature, thereafter decreases rapidly and finally reaches zero. We have shown that in the temperature range of (100-Tm)K, linear variation of resistivity of the films with temperature has been caused from both grain-boundary and electron-phonon scattering, dominating simultaneously. That is why, resistivity data could have been ...
Electrical transport and optical properties of transition-metal silicides are reviewed. They are int...
A silicide method was for the first time studied to improve the thermal stability of nickel monosili...
In this letter, the material and electrical characteristics of the nickel silicide (NiSi) formed at ...
WOS: 000327293500016The total electrical resistivity measurements of the Ni-Si silicide films, with ...
The temperature-dependent resistivity measurements of Ni-Si silicide films with 18-290 nm thicknesse...
The temperature-dependent resistivity measurements of Ag/Ni-Si silicide films with 28-260 nm thickne...
WOS: 000301083800029The temperature-dependent resistivity measurements of Ni-Si silicide films with ...
18th International Conference on Surface Modification of Materials by Ion Beams (SMMIB) -- SEP 15-20...
The temperature-dependent resistivity measurements of our Ag-Ni-Si silicide films with 51-343 nm thi...
The characterization of resistivity within thin films is paramount for proper integration into moder...
WOS: 000276929600037Nickel di-silicide formation induced by RTA process at 850 degrees C for 60 s in...
Nickel di-silicide formation induced by RTA process at 850 °C for 60 s in the Ni/Si(1 0 0) systems a...
Nickel monosilicide (NiSi) has been well recognized as a promising silicide for future ULSI devices....
In this work it is experimentally investigated a size effect in temperature coefficient of resistanc...
Nickel silicide is the product of nickel atoms being deposited onto a silicon surface. This is achie...
Electrical transport and optical properties of transition-metal silicides are reviewed. They are int...
A silicide method was for the first time studied to improve the thermal stability of nickel monosili...
In this letter, the material and electrical characteristics of the nickel silicide (NiSi) formed at ...
WOS: 000327293500016The total electrical resistivity measurements of the Ni-Si silicide films, with ...
The temperature-dependent resistivity measurements of Ni-Si silicide films with 18-290 nm thicknesse...
The temperature-dependent resistivity measurements of Ag/Ni-Si silicide films with 28-260 nm thickne...
WOS: 000301083800029The temperature-dependent resistivity measurements of Ni-Si silicide films with ...
18th International Conference on Surface Modification of Materials by Ion Beams (SMMIB) -- SEP 15-20...
The temperature-dependent resistivity measurements of our Ag-Ni-Si silicide films with 51-343 nm thi...
The characterization of resistivity within thin films is paramount for proper integration into moder...
WOS: 000276929600037Nickel di-silicide formation induced by RTA process at 850 degrees C for 60 s in...
Nickel di-silicide formation induced by RTA process at 850 °C for 60 s in the Ni/Si(1 0 0) systems a...
Nickel monosilicide (NiSi) has been well recognized as a promising silicide for future ULSI devices....
In this work it is experimentally investigated a size effect in temperature coefficient of resistanc...
Nickel silicide is the product of nickel atoms being deposited onto a silicon surface. This is achie...
Electrical transport and optical properties of transition-metal silicides are reviewed. They are int...
A silicide method was for the first time studied to improve the thermal stability of nickel monosili...
In this letter, the material and electrical characteristics of the nickel silicide (NiSi) formed at ...