WOS: 0002937735000390.5 wt% Pd-doped titanium oxide thin films were obtained by dip-coating on silicon substrates. The films were compacted by annealing in air at 300 and 500 A degrees C. Temperature dependent electrical conductivity measurements were performed in the temperature range 373-623 K, in different environments (air, methane, acetone, ethanol, formaldehyde and liquefied petroleum gas), to test the films sensing gas properties. Formaldehyde was found to be the test gas that produces the most significant changes in the electrical conductivity of the studied films. This was the reason why it was chosen to investigate its effect on their electrical conductivity. A model was proposed, the model of the potential fluctuations at grain b...
Thin films of TiO2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by d...
International audienceTin dioxide films are elaborated by a chemical vapour deposition (CVD) method....
Thin films of titanium dioxide are deposited on gas-sensor substrates at 450?degrees C from the aero...
WOS: 000290006900028Undoped and Pd-doped titanium oxide thin films (0.5 wt.%) were prepared by the s...
Chemisorption of H2 and O2 and resulting changes in electrical conductance of a typical gas sensing ...
WOS: 000276054200054In this paper we made a study on the effect of films thickness on the electrical...
Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent ...
Among metal-oxide gas sensors which change electrical resistive properties upon exposure to target g...
Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates....
Ultrathin Pt/TiO 2− x sensing films are characterized to investigate the adsorption and reacti...
WOS: 000372525400080This work presents highly sensitive TiO2 nanorods modified with palladium to inv...
In this work impedance spectroscopy technique was employed in order to characterize the gas-sensing ...
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials p...
Undoped and nickel doped titanium oxide thin films were fabricated by spray pyrolysis by using a sol...
The current through a Pd-TiO2 diode is sensitive to hydrogen at room tem-perature and becomes ensiti...
Thin films of TiO2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by d...
International audienceTin dioxide films are elaborated by a chemical vapour deposition (CVD) method....
Thin films of titanium dioxide are deposited on gas-sensor substrates at 450?degrees C from the aero...
WOS: 000290006900028Undoped and Pd-doped titanium oxide thin films (0.5 wt.%) were prepared by the s...
Chemisorption of H2 and O2 and resulting changes in electrical conductance of a typical gas sensing ...
WOS: 000276054200054In this paper we made a study on the effect of films thickness on the electrical...
Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent ...
Among metal-oxide gas sensors which change electrical resistive properties upon exposure to target g...
Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates....
Ultrathin Pt/TiO 2− x sensing films are characterized to investigate the adsorption and reacti...
WOS: 000372525400080This work presents highly sensitive TiO2 nanorods modified with palladium to inv...
In this work impedance spectroscopy technique was employed in order to characterize the gas-sensing ...
Current-voltage (I-V) characteristics well reveal the resistive switching performance of materials p...
Undoped and nickel doped titanium oxide thin films were fabricated by spray pyrolysis by using a sol...
The current through a Pd-TiO2 diode is sensitive to hydrogen at room tem-perature and becomes ensiti...
Thin films of TiO2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by d...
International audienceTin dioxide films are elaborated by a chemical vapour deposition (CVD) method....
Thin films of titanium dioxide are deposited on gas-sensor substrates at 450?degrees C from the aero...