The displacement field u› and the relative interfacial displacement field ?u› are investigated for the material formed by two isotropic media. When one of the media tends to infinity and the other one has the thickness of h, the displacement fields depend on this thickness. Applications are presented for the CoSi2/Si(111) heterosystem and also for the homogeneous system Cu/Cu(111)
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
Peculiarities in the spatial distribution of misfit dislocations near the interfaces in heterophase ...
AbstractBased on the single-dislocation Green’s function, analytical solutions of the elastic fields...
WOS: 000207837700007The displacement field (u) over right arrow and the relative interfacial displac...
International audienceThe structure of a near-Sigma 9 symmetrical tilt boundary of a silicon bicryst...
International audienceThe elastic displacement field of a sharply angular dislocation with its two l...
The present work is motivated by the idea that the layer deformation in anisotropic elasticity can b...
The purpose of this work is the numerical resolution, in the case of anisotropic elasticity, of the ...
A recent anisotropic elasticity formalism for quantifying interface dislocation arrays is used to co...
Interfaces between dissimilar materials and within polycrystalline materials are ubiquitous in moder...
Interfaces are given considerable attention in the field of nanotechnology, as many of the preferred...
The role of the free surface in determining the equilibrium position of misfit dislocations in thin ...
This work presents a transmission electron microscopy study of the local bimaterial interface respon...
We apply molecular dynamics and molecular static methods to study the effect of misfit dislocations ...
International audienceIn the present paper, the static Field Dislocation Mechanics (FDM) theory is f...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
Peculiarities in the spatial distribution of misfit dislocations near the interfaces in heterophase ...
AbstractBased on the single-dislocation Green’s function, analytical solutions of the elastic fields...
WOS: 000207837700007The displacement field (u) over right arrow and the relative interfacial displac...
International audienceThe structure of a near-Sigma 9 symmetrical tilt boundary of a silicon bicryst...
International audienceThe elastic displacement field of a sharply angular dislocation with its two l...
The present work is motivated by the idea that the layer deformation in anisotropic elasticity can b...
The purpose of this work is the numerical resolution, in the case of anisotropic elasticity, of the ...
A recent anisotropic elasticity formalism for quantifying interface dislocation arrays is used to co...
Interfaces between dissimilar materials and within polycrystalline materials are ubiquitous in moder...
Interfaces are given considerable attention in the field of nanotechnology, as many of the preferred...
The role of the free surface in determining the equilibrium position of misfit dislocations in thin ...
This work presents a transmission electron microscopy study of the local bimaterial interface respon...
We apply molecular dynamics and molecular static methods to study the effect of misfit dislocations ...
International audienceIn the present paper, the static Field Dislocation Mechanics (FDM) theory is f...
The critical epilayer thickness for the formation of misfit dislocations at the interface between an...
Peculiarities in the spatial distribution of misfit dislocations near the interfaces in heterophase ...
AbstractBased on the single-dislocation Green’s function, analytical solutions of the elastic fields...