Effects of Post Annealing on I-V-T Characteristics of (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes

1st International Physics Conference at the Anatolian Peak, IPCAP 2016 --25 February 2016 through 27 February 2016 -- --122235Post annealing is a simple, effective and suitable method for improving the diode parameters, especially when the used chemically stable substrates like Si, III-N and ternary alloys. In our work, we were applied this method to (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes (SBDs) and investigated by temperature-dependent current-voltage (I-V-T) characteristics at optimum conditions. Optimum annealing temperature was 600°C, which it's determined with respect to have a highest barrier height value. The temperature-dependent electrical characteristics of the annealed at 600°C (Ni/Au)/Al0.09Ga0.91N SBDs were investigated in the wide temperature range of 95-315K. The diode parameters such as ideality factor (n) and Schottky barrier height (?b0) were obtained to be strongly temperature dependent. The observed variation in ?b0 and n can be attributed to the spatial barrier inhomogeneities in Schottky barrier height by assuming a triple Gaussian distribution (TGD) of barrier heights (BHs) at 95-145K, 145-230K and 230-315K. The modified Richardson plots and T0 analysis was performed to provide an experimental Richardson constants and bias coefficients of the mean barrier height. Furthermore, the chemical composition of the contacts was examined by the XPS depth profile analysis. © Published under licence by IOP Publishing Ltd.110T369 National Council for Scientific Research Firat University Scientific Research Projects Management Unit --This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under the Grant of 110T369 and Scientific Research Projects Unit of Erciyes University under the Grants of FDD-2012-4124 EUBAP. -