Illumination effect on admittance measurements of polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes in wide frequency and applied bias voltage range

Istanbul Kultur University;Gebze Institute of Technology;Doga Nanobiotech Inc.;Terra Lab. Inc;LOT Oriel Group Europe1st International Congress on Advances in Applied Physics and Materials Science, APMAS2011 -- 12 May 2011 through 15 May 2011 -- Antalya --In order to have a good interpretation of the illumination effect on the capacitance-voltage (C-V) and conductance-voltage (G/?-V) profiles, C-V and G/?-V characteristics of the polyvinyl alcohol (Co, Zn-Doped)/n-Si Schottky barrier diodes (SBDs) were investigated in the wide frequency and applied bias voltage ranges at room temperature. Experimental results show that the values of both C and G/? are strong functions of frequency and applied bias voltage in dark and under illumination (200 W) conditions. It is clear that the dispersion in C and G/? is considerably high in the depletion and accumulation regions due to illumination induced electron-hole pairs and series resistance (R s) effect, respectively. The values of C and G/? exponentially decrease with the increasing frequency and at high frequencies (f>100kHz) the values of C and G/? become almost independent of frequency both in dark under illumination. © 2011 American Institute of Physics