We study the interface evolution of a series of periodic Co/Mo2C multilayers as a function of the annealing temperature up to 600 degrees C. Different complementary techniques are implemented to get information on the phenomenon taking place at the interfaces of the stack. The periodical structure of Co/Mo2C multilayer is proven by time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiles which demonstrate the formation of an oxide layer at both air/stack and stack/substrate interfaces. From Nuclear magnetic resonance (NMR) spectra, we observed the intermixing phenomenon of Co and C atoms for the as-deposited sample, and then at annealing temperature above 300 degrees C Co and C atoms separate from their mixed regions. Compar...
To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer s...
Interdiffusion of a few nanometers thick C layer with Mo and Si under annealing at a temperature of ...
In the broad scientific field of thin films, applications have rapidly expanded since the second hal...
Published in Applied Surface Science 331, 8-16 (2015).http://dx.doi.org/10.1016/j.apsusc.2014.12.055...
International audienceThe evolution upon annealing from room temperature to 600 °C of the microstruc...
B4C diffusion barrier layers are often introduced into Mo/Si multilayered films for enhancement of t...
B4C diffusion barrier layers are often introduced into Mo/Si multilayered films for enhancement of t...
To verify the mechanism of epitaxial self-smoothing of interfaces in Ni(Co)/C multilayers annealed a...
Both multilayer period thickness expansion and compaction were observed in Mo/B4C multilayers upon a...
In this work, we focus on the characterization of physico-chemical environment of the element presen...
We have studied the interface formation of thin films of Co on a Mo(1 1 0) surface by the use of sca...
Abstract: To verify the mechanism of epitaxial self-smoothing of interfaces in Ni(Co)IC multilayers ...
The growth behavior of B4C interlayers deposited at the interfaces of Mo/Si multilayers was investig...
To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer s...
The local structure of two multilayer systems Co/Zr of different layer thickness during annealing we...
To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer s...
Interdiffusion of a few nanometers thick C layer with Mo and Si under annealing at a temperature of ...
In the broad scientific field of thin films, applications have rapidly expanded since the second hal...
Published in Applied Surface Science 331, 8-16 (2015).http://dx.doi.org/10.1016/j.apsusc.2014.12.055...
International audienceThe evolution upon annealing from room temperature to 600 °C of the microstruc...
B4C diffusion barrier layers are often introduced into Mo/Si multilayered films for enhancement of t...
B4C diffusion barrier layers are often introduced into Mo/Si multilayered films for enhancement of t...
To verify the mechanism of epitaxial self-smoothing of interfaces in Ni(Co)/C multilayers annealed a...
Both multilayer period thickness expansion and compaction were observed in Mo/B4C multilayers upon a...
In this work, we focus on the characterization of physico-chemical environment of the element presen...
We have studied the interface formation of thin films of Co on a Mo(1 1 0) surface by the use of sca...
Abstract: To verify the mechanism of epitaxial self-smoothing of interfaces in Ni(Co)IC multilayers ...
The growth behavior of B4C interlayers deposited at the interfaces of Mo/Si multilayers was investig...
To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer s...
The local structure of two multilayer systems Co/Zr of different layer thickness during annealing we...
To enhance the thermal stability, B4C diffusion barrier layers are often added to Mo/Si multilayer s...
Interdiffusion of a few nanometers thick C layer with Mo and Si under annealing at a temperature of ...
In the broad scientific field of thin films, applications have rapidly expanded since the second hal...