Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD
- Chrostowski, Marta
- Alvarez, J
- Le Donne, Alessia
- Binetti, Simona
- Roca I Cabarrocas, Pere
DOIAbstract
International audienceWe investigate low-temperature (<200 • C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p-n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 • C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, s...
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