cited By 2International audienceCombined experimental and theoretical studies permit us to determine new protocols for growing by molecular beam epitaxy the technologically interesting N-rich aluminum nitride (AlN) surfaces. This is achieved by dosing the precursor gases at unusually low rates. With the help of calculated structures by using density functional theory and Boltzmann distribution of the reconstructed cells, we proposed to assign the measured surface obtained with a growth rate of 10 nm/h to a (2×2) reconstructed surface involving one additional N atom per unit cell. These N-rich AlN surfaces could open new routes to dope AlN layers with important implications in high-power and temperature technological applications
We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy. It is found t...
cited By 0International audienceNoncontact atomic force microscopy images show that gold grows on th...
The morphological evolution of AlN microstructures by varying the growth temperature and Al/N flux r...
cited By 2International audienceCombined experimental and theoretical studies permit us to determine...
The growth and surface reconstructions of AlN(0001) films were studied. For moderately Al-rich surfa...
Cette thèse se situe dans le cadre de l'électronique moléculaire qui vise à réaliser une unité de ca...
Growing AlN layers remains a significant challenge because it is subject to a large volume fraction ...
peer reviewedThe energetics, atomic geometry, and electronic structure of semipolar (11-22) and (11-...
cited By 2International audienceNitride wide-band-gap semiconductors are used to make high power ele...
Reconstructions of the AlN(0001) surface are studied. For moderately Al-rich surfaces, surface recon...
Abstract Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV...
We studied growth kinetic processes of AlN molecules on the Al-polar surface of AlN using ab initio ...
This thesis is part of molecular electronics, which aims to realize a calculation unit based on a si...
We present a comprehensive study of AlN growth on Si(111) substrate by gas source molecular beam epi...
Aluminum nitride (AlN), gallium nitride (GaN),and indium nitride (InN) form a family of technologica...
We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy. It is found t...
cited By 0International audienceNoncontact atomic force microscopy images show that gold grows on th...
The morphological evolution of AlN microstructures by varying the growth temperature and Al/N flux r...
cited By 2International audienceCombined experimental and theoretical studies permit us to determine...
The growth and surface reconstructions of AlN(0001) films were studied. For moderately Al-rich surfa...
Cette thèse se situe dans le cadre de l'électronique moléculaire qui vise à réaliser une unité de ca...
Growing AlN layers remains a significant challenge because it is subject to a large volume fraction ...
peer reviewedThe energetics, atomic geometry, and electronic structure of semipolar (11-22) and (11-...
cited By 2International audienceNitride wide-band-gap semiconductors are used to make high power ele...
Reconstructions of the AlN(0001) surface are studied. For moderately Al-rich surfaces, surface recon...
Abstract Since AlGaN offers new opportunities for the development of the solid state ultraviolet (UV...
We studied growth kinetic processes of AlN molecules on the Al-polar surface of AlN using ab initio ...
This thesis is part of molecular electronics, which aims to realize a calculation unit based on a si...
We present a comprehensive study of AlN growth on Si(111) substrate by gas source molecular beam epi...
Aluminum nitride (AlN), gallium nitride (GaN),and indium nitride (InN) form a family of technologica...
We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy. It is found t...
cited By 0International audienceNoncontact atomic force microscopy images show that gold grows on th...
The morphological evolution of AlN microstructures by varying the growth temperature and Al/N flux r...