International audienceWe demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on spin quantum beats between Zeeman-split levels under an external magnetic field. While heavy Sn atoms can be readily utilized to strengthen the spin-orbit coupling, our experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that noticeably approaches the nanosecond regime at room temperature. In addition, time decay photoluminescence experiments evidence a temperature-induced monotonic decrease of the carrier lifetime, eventua...
We present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon ...
The Si-based mid-infrared photonics is an emerging technology in which group-IV germanium–tin (Ge1–x...
The measurement of the spin diffusion length and/or lifetime in semiconductors is a key issue for th...
International audienceWe demonstrate an effective epitaxial route for the manipulation and further e...
We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intri...
We present a magneto-optical study of the carrier dynamics in compressively strained Ge1-xSnx films ...
We present a magneto-optical study of the carrier dynamics in compressively strained Ge1−xSnx films ...
Germanium (Ge) is another group-IV semiconductor material, which recently started attracting tremend...
We show that the carrier recombination rate of noncentrosymmetric materials can be strongly modified...
Germanium is a very good candidate to host a versatile spintronics platform thanks to its unique spi...
We report an experimental demonstration of room-temperature spin transport in n-type Ge epilayers gr...
Thesis (Ph. D.)--University of Rochester. Dept. of Electrical and Computer Engineering, 2013.Group I...
Germanium is a widely used material for electronic and optoelectronic devices and recently it has be...
International audienceWe demonstrate the triggering and detection of coherent electron-nuclear spin ...
Optically generated spin polarized electrons in bulk n-type Ge samples have been detected by using a...
We present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon ...
The Si-based mid-infrared photonics is an emerging technology in which group-IV germanium–tin (Ge1–x...
The measurement of the spin diffusion length and/or lifetime in semiconductors is a key issue for th...
International audienceWe demonstrate an effective epitaxial route for the manipulation and further e...
We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intri...
We present a magneto-optical study of the carrier dynamics in compressively strained Ge1-xSnx films ...
We present a magneto-optical study of the carrier dynamics in compressively strained Ge1−xSnx films ...
Germanium (Ge) is another group-IV semiconductor material, which recently started attracting tremend...
We show that the carrier recombination rate of noncentrosymmetric materials can be strongly modified...
Germanium is a very good candidate to host a versatile spintronics platform thanks to its unique spi...
We report an experimental demonstration of room-temperature spin transport in n-type Ge epilayers gr...
Thesis (Ph. D.)--University of Rochester. Dept. of Electrical and Computer Engineering, 2013.Group I...
Germanium is a widely used material for electronic and optoelectronic devices and recently it has be...
International audienceWe demonstrate the triggering and detection of coherent electron-nuclear spin ...
Optically generated spin polarized electrons in bulk n-type Ge samples have been detected by using a...
We present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon ...
The Si-based mid-infrared photonics is an emerging technology in which group-IV germanium–tin (Ge1–x...
The measurement of the spin diffusion length and/or lifetime in semiconductors is a key issue for th...