International audienceWe present details of the new electron holographic dark-field technique (HoloDark) for mapping strain in nanostructures. A diffracted beam emanating from an unstrained region of crystal is interfered (with the aid of an electrostatic biprism) with a diffracted beam from the strained region of interest. Geometric phase analysis (GPA) of the holographic fringes determines the relative deformation of the two crystalline lattices. Strain can be measured to high precision, with nanometre spatial resolution and for micron fields of view. Experiments are carried out on the SACTEM-Toulouse, a Tecnai F20 (FEI) equipped with imaging aberration corrector (CEOS), field-emission gun and rotatable biprism (FEI). We operate the micro...
Les contraintes font maintenant partie des “ boosters ” de la microélectronique au même titre que le...
Semiconductor devices experienced an impressive performance boost by the incorporation of strained s...
We report on the development of a nanometer scale strain mapping technique by means of scanning nano...
International audienceWe present details of the new electron holographic dark-field technique (HoloD...
International audienceStrain can be measured at the micron scale by Raman spectroscopy and X‐ray dif...
International audienceDiffraction-based techniques, with either electrons or photons, are commonly u...
International audienceThe genesis, theoretical basis and practical application of the new electron h...
cited By 0International audienceWe present the state of the art in strain mapping at the nanoscale u...
International audienceWe present two methods for mapping strains in MOSFETs at the nanometer scale. ...
Accurate determination of strain in electronic devices has been the subject of intense work during t...
International audienceThe last few years have seen a great deal of progress in the development of tr...
International audienceThis chapter describes the dark‐field electron holography (DFEH) technique, wh...
cited By 6International audienceStrain mapping is an active area of research in transmission electro...
Les contraintes font maintenant partie des “ boosters ” de la microélectronique au même titre que le...
Semiconductor devices experienced an impressive performance boost by the incorporation of strained s...
We report on the development of a nanometer scale strain mapping technique by means of scanning nano...
International audienceWe present details of the new electron holographic dark-field technique (HoloD...
International audienceStrain can be measured at the micron scale by Raman spectroscopy and X‐ray dif...
International audienceDiffraction-based techniques, with either electrons or photons, are commonly u...
International audienceThe genesis, theoretical basis and practical application of the new electron h...
cited By 0International audienceWe present the state of the art in strain mapping at the nanoscale u...
International audienceWe present two methods for mapping strains in MOSFETs at the nanometer scale. ...
Accurate determination of strain in electronic devices has been the subject of intense work during t...
International audienceThe last few years have seen a great deal of progress in the development of tr...
International audienceThis chapter describes the dark‐field electron holography (DFEH) technique, wh...
cited By 6International audienceStrain mapping is an active area of research in transmission electro...
Les contraintes font maintenant partie des “ boosters ” de la microélectronique au même titre que le...
Semiconductor devices experienced an impressive performance boost by the incorporation of strained s...
We report on the development of a nanometer scale strain mapping technique by means of scanning nano...