Figure 1: Si system with a tri-interstitial defect (dataset I1) (a) Lattice with bulk and defect (b) Salient Iso-surface with ability to distinguish between bulk and defect (c) An arbitrary slice of electron density data showing the shape of defect. In this article we explore techniques to detect and visualize features in data from molecular dynamics (MD) simulations. Although the techniques proposed are general, we focus on silicon (Si) atomic systems. The first set of methods use 3D location of atoms. Defects are detected and categorized using local operators and statistical modeling. Our second set of exploratory techniques employ electron density data. This data is visualized to glean the defects. We describe techniques to automatically...
Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried...
Vacancies and self-interstitial defects in silicon are here investigated by means of semi-empirical ...
Although multicrystalline silicon (mc-Si) currently is the most widely used material for fabricating...
In this application paper we explore techniques to classify anomalous structures (defects) in data g...
A simulation method which combines molecular dynamics and calculated TEM imaging is presented. The s...
An important aspect of many molecular dynamics studies is the meaningful visualization of computed a...
Producción Científican this Letter we present the detailed, quantitative comparison between experime...
New techniques are presented for the detection and analysis of surfaces and interfaces in atomistic ...
This work revises the concept of defects in crystalline solids and proposes a universal strategy for...
We present a novel computational method that makes it possible to directly extract dislocation lines...
Producción CientíficaWe used atomistic simulation tools to correlate experimental transmission elect...
We describe a novel method for extracting dislocation lines from atomistic simulation data in a full...
International audienceA first principles study of the defects generated by displacement cascades fro...
In order to clarify the limits of HREM observations of defects due to radiation damage, a simulation...
Producción CientíficaWe propose an atomistic model to describe extended {311} defects in silicon. It...
Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried...
Vacancies and self-interstitial defects in silicon are here investigated by means of semi-empirical ...
Although multicrystalline silicon (mc-Si) currently is the most widely used material for fabricating...
In this application paper we explore techniques to classify anomalous structures (defects) in data g...
A simulation method which combines molecular dynamics and calculated TEM imaging is presented. The s...
An important aspect of many molecular dynamics studies is the meaningful visualization of computed a...
Producción Científican this Letter we present the detailed, quantitative comparison between experime...
New techniques are presented for the detection and analysis of surfaces and interfaces in atomistic ...
This work revises the concept of defects in crystalline solids and proposes a universal strategy for...
We present a novel computational method that makes it possible to directly extract dislocation lines...
Producción CientíficaWe used atomistic simulation tools to correlate experimental transmission elect...
We describe a novel method for extracting dislocation lines from atomistic simulation data in a full...
International audienceA first principles study of the defects generated by displacement cascades fro...
In order to clarify the limits of HREM observations of defects due to radiation damage, a simulation...
Producción CientíficaWe propose an atomistic model to describe extended {311} defects in silicon. It...
Molecular dynamics simulation of vacancy and self-interstitial atoms in silicon crystals was carried...
Vacancies and self-interstitial defects in silicon are here investigated by means of semi-empirical ...
Although multicrystalline silicon (mc-Si) currently is the most widely used material for fabricating...