The zero-temperature conductivity of Si:B with dopant concentrations near the metal-insulator transition exhibits scaling as a function of magnetic field with an anomalously large crossover exponent. The large value of δ is associated with unusual behavior of the magnetoconductance, which vanishes as a power law approaching the transition. This demonstrates that Si:B, which has an anomalous critical conductivity exponent in zero field, also exhibits unusual behavior in response to a magnetic field. 1 Based on a number of experimental results, most notably the elegant measurements to very low temperatures by Paalanen et al. 1 in stress-tuned Si:P, the metal-insulator transition that occurs in doped semiconductors and amorphous metal-semicond...
We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P u...
We study magnetotransport properties of the Si/Nb/Si trilayers, in which the thickness of niobium, d...
The scaling of the anomalous Hall effect (AHE) was investigated using amorphous and epitaxial FexSi1...
We have studied the temperature dependence of resistivity, \u3c1, for a two-dimensional electron sys...
High-resolution measurements of the electrical conductivity $\sigma (T)$ below $T= 1\,{\rm K}$ of un...
The introduction of magnetic moments such as Gd into amorphous Si produces dramatic effects in elect...
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in b...
We report the temperature dependence of magnetotransport measurements in a Si/SiGe two-dimensional h...
We present results of 1/f noise measurements at low frequency (10(-3) < f < 10 Hz) and at low temper...
We report investigations of conductance fluctuations (with 1/f alpha power spectra) in doped silicon...
We present results of measurements of 1/f noise $(10^-3< f <10 Hz)$ at low temperatures (1K <T < 100...
In this letter we report measurements of conductance fluctuations in single-crystal samples of Si do...
We measure the low-temperature longitudinal and Hall conductivities in a series of Ge:Sb samples at ...
We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity i...
The conductance of ballistic point contacts in high-mobility Si-inversion layers has been studied at...
We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P u...
We study magnetotransport properties of the Si/Nb/Si trilayers, in which the thickness of niobium, d...
The scaling of the anomalous Hall effect (AHE) was investigated using amorphous and epitaxial FexSi1...
We have studied the temperature dependence of resistivity, \u3c1, for a two-dimensional electron sys...
High-resolution measurements of the electrical conductivity $\sigma (T)$ below $T= 1\,{\rm K}$ of un...
The introduction of magnetic moments such as Gd into amorphous Si produces dramatic effects in elect...
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in b...
We report the temperature dependence of magnetotransport measurements in a Si/SiGe two-dimensional h...
We present results of 1/f noise measurements at low frequency (10(-3) < f < 10 Hz) and at low temper...
We report investigations of conductance fluctuations (with 1/f alpha power spectra) in doped silicon...
We present results of measurements of 1/f noise $(10^-3< f <10 Hz)$ at low temperatures (1K <T < 100...
In this letter we report measurements of conductance fluctuations in single-crystal samples of Si do...
We measure the low-temperature longitudinal and Hall conductivities in a series of Ge:Sb samples at ...
We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity i...
The conductance of ballistic point contacts in high-mobility Si-inversion layers has been studied at...
We present measurements of the electrical conductivity at low temperatures of bulk samples of Si:P u...
We study magnetotransport properties of the Si/Nb/Si trilayers, in which the thickness of niobium, d...
The scaling of the anomalous Hall effect (AHE) was investigated using amorphous and epitaxial FexSi1...