R. van Langevelde

integrated circuits Abstract: A new compact model for MOS transistors has been developed, MOS Model 11 (MM11), the successor of MOS Model 9. MM11 not only gives an accurate description of charges and currents and their first-order derivatives (transconductance, conductance, capacitances), but also of their higherorder derivatives. In other words it gives an accurate description of MOS-FET distortion behaviour, and as such MM11 is suitable for digital, analog as well as RF circuit design. MOS Model 11 is a symmetrical, surface-potential-based model. It includes an accurate description of all physical effects important for modern and future CMOS technologies, such as e.g. gate tunnelling current, influence of pocket implants, poly-depletion, quantum-mechanical effects and bias-dependent overlap capacitances. The goal of this report is to present the full definition of the model, including the parameter set, the geometrical and temperature scaling rules