Invited Paper AlGaSLilGaSbMetal-Semiconducthr-Metal Detectors Grown on InP substrates (Invited Paper)

A105Ga05Sb/GaSb meta1semiconductor-meta1 (MSM) detectors have been prepared on semi-insulating InP substrates. The molecular beam epitaxially grown samples on differently oriented substrates exhibit different types of conductivity. The Schottky barrier height between Al and Al0 5Ga05Sb grown on (311)B oriented substrates is 0.6 eV, while the Al contacts on (100) sample exhibit ohmic behavior. The results show that the Sb-deficiency related p-type native defect density is significantly reduced in the samples grown on (311)B oriented substrates. The 3—dB device response bandwidth is about 1 GHz at room temperature and beyond 10 GHz at 77K. The metal-semiconductor-metal (MSM) photodetectors offer the fundamental advantages of extremely low device capacitance and compatibility with MESFETs technology. These advantages are favorable for optical fiber receivers in high speed and low noise operation. Due to their unique planar structure, the capacitance of MSM photodetectors is very low. It has been shown that an integrated photoreceive