A statistical technique X-IDDQ for extracting defect information from IDDQ data is presented that is effective for detection of defects in ICs. The technique treats the IDDQ measurements in a holistic manner to come up with a statistic X that is highly correlated to the presence of defects. X-IDDQ facilitates binning of ICs and enhances the test process by early identification of faults. The transformation metrics, for evaluating X statistic from IDDQ measurements, obtained using one batch works extremely well for different batches, facilitating its use with manufacturing-line testing
A test apparatus for testing a device under test (DUT) to detect a defect comprises a measurement ci...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
Due to the character of the original source materials and the nature of batch digitization, quality ...
The use of I DDQ test as a defect reliability screen has been widely used to improve device quality....
significantly. However, the properties of the power grid IDDQ or steady state current testing has be...
Abnormal IDDQ (Quiescent VDD supply current) indicates the existence of physical damage in a circuit...
A test apparatus for testing a device under test (DUT) to detect a defect comprises a measurement ci...
Semiconductor manufacturing test has traditionally been seen as a simple task that segregates good D...
ISBN: 0-7803-9205-1Although I/sub DDQ/ testing has become a widely accepted defect detection techniq...
The use of a single pass/fail threshold for IDDQ testing is unworkable as chip background currents i...
A majority of defects found in CMOS technology display elevated quiescent current magnitudes but sti...
This thesis presents a statistical method to identify the test escapes. Test often acquires parametr...
A test apparatus for testing a device under test (DUT) to detect a defect comprises a measurement ci...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
[[abstract]]In this work, IDDQ current for the deep sub-micron VLSI in year 2011 is estimated with a...
Due to the character of the original source materials and the nature of batch digitization, quality ...
The use of I DDQ test as a defect reliability screen has been widely used to improve device quality....
significantly. However, the properties of the power grid IDDQ or steady state current testing has be...
Abnormal IDDQ (Quiescent VDD supply current) indicates the existence of physical damage in a circuit...
A test apparatus for testing a device under test (DUT) to detect a defect comprises a measurement ci...
Semiconductor manufacturing test has traditionally been seen as a simple task that segregates good D...
ISBN: 0-7803-9205-1Although I/sub DDQ/ testing has become a widely accepted defect detection techniq...
The use of a single pass/fail threshold for IDDQ testing is unworkable as chip background currents i...
A majority of defects found in CMOS technology display elevated quiescent current magnitudes but sti...
This thesis presents a statistical method to identify the test escapes. Test often acquires parametr...
A test apparatus for testing a device under test (DUT) to detect a defect comprises a measurement ci...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...
This paper presents an equivalent current sensing technique for the applications of IDDQ tests. This...