Statistical Vt variations lead to large variations of leakage current, which cause statistical voltage drops on the power grid that can a#ect circuit timing. We propose a statistical analysis technique whereby variances of the leakage currents are used to estimate the susceptibility to timing violations due to leakage-induced voltage drops
With the aggressive scaling down of semiconductor VLSI devicesfrom 65nm to 45 nm, 32nm, the process ...
We describe the impact of process variation on leakage power for a 0.18µm CMOS technology. We show t...
This paper presents an analytical model for projecting the yield loss due to random delay defects fo...
Driven by the need for faster devices and higher transistor densities, technology trends have pushed...
DoctorAggressive technology scaling makes the process variations a significant problem in VLSI desig...
As the technology scales into 90nm and below, process-induced variations become more pronounced. In ...
DoctorAs technology node shrinks, process variation (PV) becomes a major concern in circuit design. ...
Statistical behavior of device leakage and threshold voltage shows a strong width dependency under m...
Voltage drops are one of the most stringent problems in modern IC implementation, which is exacerbat...
textThe increased variability of process and environmental parameters is having a significant impac...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
Abstract-The growing demand in the multimedia rich applications are motivating the low-power and hig...
Abstract—This paper presents a novel framework for accurate estimation of key statistical parameters...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
Abstract—Cascading failure in power grids has long been rec-ognized as a sever security threat to na...
With the aggressive scaling down of semiconductor VLSI devicesfrom 65nm to 45 nm, 32nm, the process ...
We describe the impact of process variation on leakage power for a 0.18µm CMOS technology. We show t...
This paper presents an analytical model for projecting the yield loss due to random delay defects fo...
Driven by the need for faster devices and higher transistor densities, technology trends have pushed...
DoctorAggressive technology scaling makes the process variations a significant problem in VLSI desig...
As the technology scales into 90nm and below, process-induced variations become more pronounced. In ...
DoctorAs technology node shrinks, process variation (PV) becomes a major concern in circuit design. ...
Statistical behavior of device leakage and threshold voltage shows a strong width dependency under m...
Voltage drops are one of the most stringent problems in modern IC implementation, which is exacerbat...
textThe increased variability of process and environmental parameters is having a significant impac...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
Abstract-The growing demand in the multimedia rich applications are motivating the low-power and hig...
Abstract—This paper presents a novel framework for accurate estimation of key statistical parameters...
This article presents a new methodology to extract, at a given operation condition, the statistical ...
Abstract—Cascading failure in power grids has long been rec-ognized as a sever security threat to na...
With the aggressive scaling down of semiconductor VLSI devicesfrom 65nm to 45 nm, 32nm, the process ...
We describe the impact of process variation on leakage power for a 0.18µm CMOS technology. We show t...
This paper presents an analytical model for projecting the yield loss due to random delay defects fo...