Effect of p-Doping on the Temperature Dependence of Differential Gain in FP and DFB 1.3- m InGaAsP–InP Multiple-Quantum-Well Lasers

Abstract—The temperature dependence of differential gain for 1.3- m InGaAsP–InP FP and DFB lasers with two profiles of p-doping was obtained from RIN measurements within the temperature range of 25 C–65 C. Experiments showed that the change of the active region doping level from 3 1017 cm 3 to 3 1018 cm 3 leads to a 50 % increase of the differential gain for FP lasers at 25 C. Heavily doped devices also exhibit more rapid reduction of the differential gain with increasing temperature. The effect of active region doping on the energy separation between the electron Fermi level and electronic states coupled into the laser mode explains the observations. The temperature dependence of differential gain for DFB devices strongly depends on the detuning of the lasing wavelength from the gain peak. I